A CMOS 3–12-GHz Ultrawideband Low Noise Amplifier by Dual-Resonance Network

Li, Nan; Feng, Wang; Li, Xiuping

doi:10.1109/lmwc.2017.2679203

Cited by 70 publications

(34 citation statements)

References 7 publications

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“…A figure of merit (FoM) is used to compare the overall performance of the LNAs and given by Eq. 6 [11]. The LNA presented here offers comparable performance in terms of gain, NF, and linearity, which leads to achieving one of the highest FOM.…”

Section: Resultsmentioning

confidence: 89%

A Low Power Single Ended Inductorless Wideband CMOS LNA With Gm Enhancement and Noise Cancellation

An¹,

Xu²,

Zhou³

et al. 2018

dtetr

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Abstract. This work proposes a low power single ended wideband CMOS low noise amplifier for low power short-range wireless communication based on IoT. The main novelty lies in significant improvement in bandwidth by using the inverter cell and in noise by noise cancellation topologies. By using active shunt-feedback architecture, the current of the feedback stage is reused on the forward path to improve the current efficiency of the LNA. The complementary characteristic leads to partial second-order distortion cancellation simultaneously. With TSMC 180 nm CMOS process, the proposed LNA presents maximum voltage gain of 15 dB, a minimum noise figure of 1.79 dB and an input 1 dB compression point of -24.65 dBm. It consumes 3 mW from 1.8 V dc supply and occupies a core area of 0.004 mm².

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Section: Resultsmentioning

confidence: 89%

A Low Power Single Ended Inductorless Wideband CMOS LNA With Gm Enhancement and Noise Cancellation

An¹,

Xu²,

Zhou³

et al. 2018

dtetr

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“…An UWB amplifier with higher gain and better in‐band flatness as well as lower noise figure (NF) is needed for such RF front‐end. There are several UWB CMOS amplifiers have been demonstrated with various techniques to improve the bandwidth . However, those amplifiers typically suffer from limited power gain (<15 dB) across the interest band.…”

Section: Introductionmentioning

confidence: 99%

“…The most recent reported LNA in Ref. demonstrated a 3‐stage common‐gate (CG) UWB amplifier. Though the amplifier achieves an extraordinary bandwidth covering 3~12 GHz, the NF is still higher than 4 dB due to intrinsic noise performance of CG transistors.…”

Section: Introductionmentioning

confidence: 99%

3‐13 GHz Q‐enhanced low noise amplifier with optimized inductors utilizing in‐phase current returning path technique

Wang

Yang

Wang

2019

Micro & Optical Tech Letters

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In this letter, a 3‐13 GHz UWB low noise amplifier (LNA) with high power gain is reported using a standard 130‐nm CMOS. In the first stage, Q‐enhanced inductors are proposed by using an in‐phase current returning path (CRP) technique. Compared to traditional ground ring CRP and anti‐phase CRP, the quality factor of the inductor is improved by decreasing the mutual inductance between the spiral coil and CRP. As a result, the proposed LNA achieves a power gain (S21) of 22.5 ± 1.5 dB from 3.4 to 13.2 GHz while combining with the inductive peaking technology. In addition, an average noise figure of 3 dB is achieved within an ultra‐wide band up to 17 GHz. The UWB amplifier also achieves an in‐band IIP3 of −16.8 dBm and a DC power of 20.5 mW at 1.2 V supply. It occupies an area of 0.82 × 0.71 mm2 including pads.

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“…Using this methods, the dc current is shared among transistors, while each contributes to the overall gain of the LNA [3,4,5]. Moreover, Some CMOS-based UWB LNA, which utilize the current-reused technique, were reported [6,7,8,9]. For the current-reused UWB LNA in [6], the minimum NF and flat power gain were achieved, while the gain is 7.92 dB which is not enough.…”

Section: Introductionmentioning

confidence: 99%

“…For [8], though the NF of 3.9-5.8, the bandwidth did not reach 3.1-10.6 GHz. For the UWB LNA in [9], a dual-resonance network was proposed to achieve bandwidth more than 3.1-10.6 GHz. However, the S21 of 13.5±1.5 and NF of 4-4.6 is still not satisfactory.…”

Section: Introductionmentioning

confidence: 99%

Design of ultra-wideband LNA with 3.6 ± 0.4 dB NF and 15.9 ± 1.1 dB gain

Pan

Zhang

Huang

et al. 2018

IEICE Electron. Express

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This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) with low and flat noise figure (NF) as well as high and flat gain using 0.18 µm CMOS technology. Frequency range for both NF and gain is expanded by using current-reuse and weak shunt resistor feedback. The LNA consumes 8.4 mW under 1.8 V. High performances are achieved with the gain of 15.9±1.1 dB, NF of 3.6±0.4 dB within 2.9-10.8 GHz band. The input 1 dB compression point (P 1dB ) is -17.1 dBm at 7 GHz. The area of the LNA is 0.63 mm 2 , with pads included.

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A CMOS 3–12-GHz Ultrawideband Low Noise Amplifier by Dual-Resonance Network

Cited by 70 publications

References 7 publications

A Low Power Single Ended Inductorless Wideband CMOS LNA With Gm Enhancement and Noise Cancellation

A Low Power Single Ended Inductorless Wideband CMOS LNA With Gm Enhancement and Noise Cancellation

3‐13 GHz Q‐enhanced low noise amplifier with optimized inductors utilizing in‐phase current returning path technique

Design of ultra-wideband LNA with 3.6 ± 0.4 dB NF and 15.9 ± 1.1 dB gain

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