A CMOS bandgap reference without resistors

Buck, Allan; McDonald, C.; Lewis, S.H.; Viswanathan, T.R.

doi:10.1109/4.974548

Cited by 127 publications

(17 citation statements)

References 4 publications

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“…Nevertheless, there are some noticeable deviations between simulation and experimental results. This can be perceived looking back to equations (2) and (4). According to these equations there are several process dependent parameters to take into consideration, namely: V TH (T 0 ), V off , K T , η and I o .…”

Section: Process Dependencymentioning

confidence: 99%

“…In [7] the authors derived a model for the temperature dependence of V GS , given by, V GS has a negative temperature coefficient, defined by K G . In its turn, K G is defined as, (4) where, K T is the temperature coefficient of V TH . Temperature independent voltage reference output can be achieved through a linear combination of (2) and (3).…”

Section: Expmentioning

confidence: 99%

“…Strong inversion MOSFETs obey to the wellknown quadratic current law, for which the dependence on V T is not as direct as in bipolar transistors. Possible implementations use diodes instead of bipolar transistors in order to measure V T [3,4]. More recently, the exploitation of sub-threshold and weak inversion brought a new edge to voltage reference design.…”

Section: Introductionmentioning

confidence: 99%

“…Weak inversion MOSFETs obey to an exponential current law, in which V T appears implicitly. This has motivated the introduction of the proportional-toabsolute temperature (PTAT) reference sources [4][5][6][7]. In this paper we discuss performance issues related to PTAT reference sources.…”

Section: Introductionmentioning

confidence: 99%

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A multi-valued 350nm CMOS voltage reference

Lourenço

Alves

Cura

2012

2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)

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This paper describes, a voltage reference source using sub-threshold MOSFETs. The circuit supports supply voltages ranging from 1.5V to 3.3V and temperature variations ranging f r o m -20ºC to 80ºC. Different values for the voltage reference can be achieved without severe performance impairments. The proposed circuit was produced in the 350nm CMOS process from AMS and occupies less than 0.0335mm 2 . Simulation and experimental data show that this circuit is able to achieve, a 3mV variation for the entire temperature span and a 2mV variation for the entire supply voltage span.

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Section: Process Dependencymentioning

confidence: 99%

Section: Expmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A multi-valued 350nm CMOS voltage reference

Lourenço

Alves

Cura

2012

2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)

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“…Some of the voltage reference cells are available in standard CMOS processes which consume high power (e.g. [85,86,87,88,89,90,91,92,93,94,95,96,97,98,99,100,101,102,103,104,99,105,106,107]). Line regulation is another important parameter.…”

Section: A1 the Proposed Circuitmentioning

confidence: 99%

Integrated Circuits for Programming Flash Memories in Portable Applications

Navidi¹

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Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as highvoltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration.

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CMOS Voltage Reference without Resistors

Kok¹,

Tam²

2012

CMOS Voltage References

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A CMOS bandgap reference without resistors

Cited by 127 publications

References 4 publications

A multi-valued 350nm CMOS voltage reference

A multi-valued 350nm CMOS voltage reference

Integrated Circuits for Programming Flash Memories in Portable Applications

CMOS Voltage Reference without Resistors

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