A CMOS Charge Sensitive Amplifier with sub-electron equivalent noise charge

Bertuccio, G.; Macera, D.; Graziani, C.; Ahangarianabhari, M.

doi:10.1109/nssmic.2014.7431123

Cited by 18 publications

(9 citation statements)

References 6 publications

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“…The front-end and the whole acquisition chain follow the same pattern for both setups, except for slight differences according to the specifications of the two particular cases. The first read-out stage is entrusted to the ultra-low noise SIRIO charge sensitive preamplifier [11], specifically designed in two versions for the two different applications. The preamplifier output signals, one for each detector element, are filtered and further amplified by CR-RC 2 analogue preshaper with a selectable shaping time.…”

Section: Signal Conditioning and Data Acquisition Chainmentioning

confidence: 99%

Large solid angle and high detection efficiency multi-element silicon drift detectors (SDD) for synchrotron based x-ray spectroscopy

Bufon¹,

Altissimo²,

Aquilanti³

et al. 2019

AIP Conference Proceedings

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Third and fourth generation light sources have revolutionized the research in many scientific and technological disciplines. New scientific challenges impose the construction of cutting-edge performance machines and experimental stations. In this context, off-the-shelf detection systems severely constrain the achievable results. These reasons motivated the ReDSoX research project, aiming to explore new solutions related to energy resolving imagers based on Silicon Drift Detectors (SDD), which are among the most employed acquisition devices in X-ray fluorescence spectroscopy. The main goal of the project is to develop novel versatile detection systems able to cover a large photoemission solid angle, being easily adaptable to the needs of different X-ray spectroscopy beamlines and ready to cope with high photon count-rates in order to exploit all the power of new light sources. Research efforts yielded two detector systems, dedicated to different experimental needs. The first system is composed of 32 SDD elements arranged on 4 monolithic sensors and covers a total non-collimated area of 1230 mm 2. Such device is optimized for detecting low-energy photons in the 200-4000 eV energy range. The second detector consists of a matrix of 64 SDD elements disposed on 8 monolithic arrays covering an overall non-collimated active area of 576 mm 2 and operating over an energy range between 4 and 30 keV. Both systems are highly integrated and can either be operated as an apparent large area single detector or as a multi-element detector, collecting information separately from each single element in order to enable spatially and angularly resolved advanced studies. The performances of the two detector systems have been studied at the TwinMic and XAFS beamlines (Elettra Sincrotrone Trieste, Italy), respectively. Recent results obtained during these measurements are presented and discussed.

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Section: Signal Conditioning and Data Acquisition Chainmentioning

confidence: 99%

Large solid angle and high detection efficiency multi-element silicon drift detectors (SDD) for synchrotron based x-ray spectroscopy

Bufon¹,

Altissimo²,

Aquilanti³

et al. 2019

AIP Conference Proceedings

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“…In order to characterize the novel PixDD detector an ultra low-noise charge preamplifier has been selected to ensure the minimum contribution of the front-end electronics to the detector noise and energy resolution. All the tests described in this paper have been performed with the SIRIO 3 charge sensitive preamplifier (CSA) developed at the Polytechnic of Milan [7] to achieve a nearly Fano limited resolution performance. The SIRIO performance (ENC of 1.3 e − r.m.s.…”

Section: Pixdd Read-out Systemmentioning

confidence: 99%

“…The detector system exploits the superior noise characteristics typical of the Silicon Drift Detectors (SDD) and the ultra-low noise performance of a dedicated front-end electronics. The PixDD development builds on the state-of-the-art results achieved in Italy on both SDDs, with the combined design and manufacturing technology of INFN-Trieste and Fondazione Bruno Kessler (FBK, Trento), and the read-out electronics, with the unprecedented noise performance of the SIRIO charge preamplifier [6,7] developed at Polytechnic of Milan. This high-performance, pixelated silicon detector (<1 mm 2 /pixel) has been designed aiming to imaging, timing and spectroscopic studies of astrophysical X-ray sources and will enable the development of a large-area detector with immediate application to spaceborne high-energy astrophysics experiments.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a novel pixelated Silicon Drift Detector (PixDD) for high-throughput X-ray astrophysics

et al. 2018

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A : Multi-pixel fast silicon detectors represent the enabling technology for the next generation of space-borne experiments devoted to high-resolution spectral-timing studies of low-flux compact cosmic sources. Several imaging detectors based on frame-integration have been developed as focal plane devices for X-ray space-borne missions but, when coupled to large-area concentrator X-ray optics, these detectors are affected by strong pile-up and dead-time effects, thus limiting the time and energy resolution as well as the overall system sensitivity. The current technological gap in the capability to realize pixelated silicon detectors for soft X-rays with fast, photon-by-photon response and nearly Fano-limited energy resolution therefore translates into the unavailability of sparse read-out sensors suitable for high throughput X-ray astronomy applications. In the framework of the ReDSoX Italian collaboration, we developed a new, sparse read-out, pixelated silicon drift detector which operates in the energy range 0.5-15 keV with nearly Fano-limited energy resolution (≤150 eV FWHM @ 6 keV) at room temperature or with moderate cooling (∼0 • C to +20 • C). In this paper, we present the design and the laboratory characterization of the first 16-pixel (4×4) drift detector prototype (PixDD), read-out by individual ultra low-noise charge sensitive preamplifiers (SIRIO) and we discuss the future PixDD prototype developments.

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“…. is a fully integrated CSP designed in 0.35 m CMOS technology, it operates in pulsed-reset mode and has a power consumption of about 10 mW, a detailed description of SIRIO can be found in [24]. A SIRIO-3G chip, whose area is smaller than 0.4 mm , has been glued onto the detector in close proximity to the anode in order to minimize the bonding wire length and so the associated stray capacitance.…”

Section: The Sirio Preamplifiermentioning

confidence: 99%

X-Ray Silicon Drift Detector–CMOS Front-End System with High Energy Resolution at Room Temperature

Bertuccio

Ahangarianabhari

Graziani

et al. 2016

IEEE Trans. Nucl. Sci.

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We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm , has been manufactured by optimizing the production processes in order to reduce the anode current, successfully reaching current densities between 17 pA/cm and 25 pA/cm at 20 for drift fields ranging from 100 V/cm to 500 V/cm. The preamplifier shows minimum intrinsic noise levels of 1.27 and 1.0 electrons r.m.s. at 20 and 30 , respectively. At room temperature ( ) the 5.9 keV and the pulser lines have 136 eV and 64 eV FWHM, respectively, corresponding to an equivalent noise charge of 7.4 electrons r.m.s.; the noise threshold is at 165 eV. The energy resolution, as measured on the pulser line, ranges from 82 eV FWHM (9.4 electrons r.m.s.) at 30 down to 29 eV FWHM (3.3 electrons r.m.s.) at 30 .

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A CMOS Charge Sensitive Amplifier with sub-electron equivalent noise charge

Cited by 18 publications

References 6 publications

Large solid angle and high detection efficiency multi-element silicon drift detectors (SDD) for synchrotron based x-ray spectroscopy

Large solid angle and high detection efficiency multi-element silicon drift detectors (SDD) for synchrotron based x-ray spectroscopy

Characterization of a novel pixelated Silicon Drift Detector (PixDD) for high-throughput X-ray astrophysics

X-Ray Silicon Drift Detector–CMOS Front-End System with High Energy Resolution at Room Temperature

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