A CMOS Polar Class-G Switched-Capacitor PA With a Single High-Current Supply, for LTE NB-IoT and eMTC

Bechthum, Elbert; Soussi, Mohieddine El; Dijkhuis, Johan; Mateman, Paul; Schaik, Gert-Jan van; Breeschoten, Arjan; Liu, Yao‐Hong; Bachmann, Christian

doi:10.1109/jssc.2019.2910407

Cited by 19 publications

(6 citation statements)

References 23 publications

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“…reflects the role of the fine gain steps to provide the consistency between the bands. For this case, because the previous works have not provided any data comparing the power consistency among the bands for the proposed dual-band implementation, the comparison is performed between the low and high bands, resulting in a maximum 1% mismatch of power level which is better in comparison with [5,8,9].…”

Section: Resultsmentioning

confidence: 99%

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A Dual-Band 47-dB Dynamic Range 0.5-dB/Step DPA with Dual-Path Power-Combining Structure for NB-IoT

Rad

Kim

et al. 2022

Sensors

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This paper presents a digital power amplifier (DPA) with a 43-dB dynamic range and 0.5-dB/step gain steps for a narrow-band Internet of Things (NBIoT) transceiver application. The proposed DPA is implemented in a dual-band architecture for both the low band and high band of the frequency coverage in an NBIoT application. The proposed DPA is implemented in two individual paths, power amplification, and power attenuation, to provide a wide range when both paths are implemented. To perform the fine control over the gain steps, ten fully differential cascode power amplifier cores, in parallel with a binary sizing, are used to amplify power and enable signals and provide fine gain steps. For the attenuation path, ten steps of attenuated signal level are provided which are controlled with ten power cores, similar to the power amplification path in parallel but with a fixed, small size for the cores. The proposed implementation is finalized with output custom-made baluns at the output. The technique of using parallel controlled cores provides a fine power adjustability by using a small area on the die where the NBIoT is fabricated in a 65-nm CMOS technology. Experimental results show a dynamic range of 47 dB with 0.5-dB fine steps are also available.

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Section: Resultsmentioning

confidence: 99%

“…It is known that providing an output power range by using bias control does not satisfy the NB-IoT's demanding gain control requirement. In [5], a novel structure is proposed by using a class-G efficiency enhancement with a high-current power supply requirement and SC cells. This work proposed two on-chip baluns.…”

Section: Introductionmentioning

confidence: 99%

A Dual-Band 47-dB Dynamic Range 0.5-dB/Step DPA with Dual-Path Power-Combining Structure for NB-IoT

Rad

Kim

et al. 2022

Sensors

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“…where N represents the power combining network number of ports excluding the load port. Using (12), the unknown variables are s 5i (i = 1-5). The magnitude of s 51 can be obtained…”

Section: Doherty Power Combining Networkmentioning

confidence: 99%

A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter

Beikmirza

Shen

Vreede

et al. 2021

IEEE J. Solid-State Circuits

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We present a wideband, 12-bit four-way Doherty Cartesian digital transmitter (DTX) featuring an innovative 50%-LO signed I/ Q interleaved up-conversion technique that enables close to perfect orthogonal I/ Q summation. The DTX incorporates a compact four-way lumped-element Doherty power combining network to enhance its average efficiency at deep power back-off (DPBO). It comprises a signed second-order hold (SOH) interpolation filter to suppress the sampling spectral replicas significantly. The proposed DTX is realized in a 40-nm bulk CMOS and delivers a peak output power of 27.54 dBm with drain and system efficiencies of 46.35% and 30.77%, respectively, at 5.3 GHz. At 12 dB DPBO, the realized DTX demonstrates a drain efficiency (DE) of 41.74%-39.27% in a 5.2-5.5 GHz band, respectively. Its intrinsic I/ Q image, LO leakage, and C-IMD3/H 3BB for a 200 MHz tone spacing over a 4.8-6.2 GHz band are −64, −65, and −69 dBc, respectively, without calibration. Applying a simple memoryless 2 × 1-D digital pre-distortion, its error vector magnitude and adjacent channel leakage ratio are lower than −31 dB and −39 dBc, respectively, for a six-carrier "40 MHz 256-QAM OFDM" signal with 18 dBm average output power and a 41% average DE. The signed SOH functionality is verified employing a four-carrier "80 MHz 512-QAM OFDM" signal with spectral purity of better than −35 dBc, while its baseband sampling frequency is 675 MHz.

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“…There are two solution for realizing CMOS broadband PA. The first way is optimizing the performance of the matching network, which includes switched-capacitor PA [6,7], transformer-based PA [8,9] and transmission line PA [10,11]. But the value of the passive devices and the complexity of the matching network will be enhanced with the bandwidth expanding.…”

Section: Introductionmentioning

confidence: 99%

A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique

Ren

Zou

2020

IEICE Electron. Express

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The adaptive bias technique is the common technology for improving the power-added efficiency (PAE) of the power amplifier (PA). However, the performance of the adaptive bias technique is sensitive to the frequency variation. This paper presents a novel adaptive bias as the common-source bias of the 45-2500 MHz CMOS PA, which combines the subthreshold PD to decrease the effect on frequency of adaptive bias technique and a unity gain amplifier to increase the detection sensitivity, for improving the PAE at back-off mode over the wide bandwidth. The proposed PA provides a good performance from 45 MHz to 2500 MHz, while the peak of the saturation output power is 24.02 dBm over the frequency band. Moreover, the maximum PAE achieves 44.61 % at 500 MHz and the PAE is larger than 28.48 % at 3 dB back-off power. The chip size of the broadband PA achieves 1.87 mm 2 at TSMC 0.18 um technology process. It draws 200 mA from 3.3 V supply voltage.

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A CMOS Polar Class-G Switched-Capacitor PA With a Single High-Current Supply, for LTE NB-IoT and eMTC

Cited by 19 publications

References 23 publications

A Dual-Band 47-dB Dynamic Range 0.5-dB/Step DPA with Dual-Path Power-Combining Structure for NB-IoT

A Dual-Band 47-dB Dynamic Range 0.5-dB/Step DPA with Dual-Path Power-Combining Structure for NB-IoT

A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter

A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique

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