A CMOS resistive ring mixer MMICs for GSM 900 and DCS 1800 base station applications

Gould, P.; Zelley, C.; Lin, Jenshan

doi:10.1109/mwsym.2000.861103

Cited by 28 publications

(7 citation statements)

References 6 publications

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“…General parasitic circuit resistance is minimized by using thick inductor metal for all circuit connections, inductors and device access [9]. We made smaller value capacitors array to minimize the series resistance of the DC blocking capacitors on LO and RF ports.…”

Section: Mixer Layoutmentioning

confidence: 99%

0.25 μm CMOS resistive ring subthreshold mixer

Wang

Chen

Borić–Lubecke

2006

2006 Asia-Pacific Microwave Conference

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This paper describes 0.25 μm CMOS resistive ring mixer operating in the subthreshold region. By applying a small gate bias, the conversion loss under low LO conditions has been improved tremendously, while the DC power dissipation is negligible. This mixer has been designed in 0.25-μm CMOS TSMC process, with a chip size of 1.24x0.8 mm 2 . It exhibits good matching characteristics and relatively low conversion loss over a wide band of 2-3 GHz. This mixer can be driven by LO power as low as -10 dBm, while increasing conversion loss by less than 3 dB.Index Terms -CMOS passive mixer, conversion loss subthreshold.

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Section: Mixer Layoutmentioning

confidence: 99%

0.25 μm CMOS resistive ring subthreshold mixer

Wang

Chen

Borić–Lubecke

2006

2006 Asia-Pacific Microwave Conference

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“…Both the 900-and 1800-MHz mixers are passive devices and, therefore, require no dc bias. These resistive CMOS mixers have a double-balanced ring structure and maintain their conversion loss level over a wide range of an LO input power level [10]. The conversion loss of the 900-and 1800-MHz mixer is 6.3 and 6.4 dB, respectively.…”

Section: Mixermentioning

confidence: 99%

0.25-μm BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

Gould¹,

Lin²,

Borić–Lubecke³

et al. 2002

IEEE Trans. Microwave Theory Techn.

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This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-m BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet global system for mobile communications normal and micro base-station specifications reported to date. Noise figure, gain, and output infrared third-order intercept point are 2.1 dB, 25.8 dB, and 25.7 dBm for GSM900 and 3.3 dB, 21.3 dB, and 22.5 dBm for DCS1800, respectively.

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“…A double‐balanced resistive mixer also exhibits inherent high linearity [2, 3], and it has been shown to be suitable for both homodyne and heterodyne wireless transceivers [4]. Most double‐balanced mixers reported to date have been implemented using four MOSFETs (mixer core) and additional passive elements for RF [5–7], LO [5, 6], and IF matching [7], and to improve LO efficiency [8]. These passive elements occupy significantly more space on the chip die than the mixer transistor core.…”

Section: Introductionmentioning

confidence: 99%

“…These passive elements occupy significantly more space on the chip die than the mixer transistor core. In addition, typically, a double‐balanced mixer configuration requires single‐ended to differential transitions at the RF and LO ports, which are usually implemented off‐chip [4–9], adding cost, size, and complexity. If used in direct down‐conversion receivers, these mixers typically require DC cancellation circuitry to eliminate large DC offset [10, 11].…”

Section: Introductionmentioning

confidence: 99%

0.18‐μm CMOS wideband passive mixer

Song

Borić–Lubecke

2012

Micro & Optical Tech Letters

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A 0.18‐μm CMOS wideband passive mixer fully integrated with baluns in IBM7HP process is reported. The mixer exhibits wideband operation, despite the intrinsic narrow‐band magnitude balance of passive baluns. Very low DC offset, of less than 3 mV, is achieved without any DC cancellation circuits, due to high LO–RF isolation. At the RF frequency of 2.4 GHz, the combined IF differential outputs provide conversion loss (CL) of 7.5 dB, input 1 dB compression point (IP1dB) of 6.2 dBm, and input third‐order intercept point (IIP3) of 15.5 dBm. This mixer exhibits broad‐band RF impedance matching with reflection coefficient magnitude better than −9.6 dB through the RF frequency range from 1 to 12 GHz. The CL of 10.1–12.9 dB, IP1dB of 8.6–14.4 dBm, and IIP3 of 16–22.2 dBm are achieved at this frequency range for broad‐band applications. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:23–27, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27226

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A CMOS resistive ring mixer MMICs for GSM 900 and DCS 1800 base station applications

Cited by 28 publications

References 6 publications

0.25 μm CMOS resistive ring subthreshold mixer

0.25 μm CMOS resistive ring subthreshold mixer

0.25-μm BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

0.18‐μm CMOS wideband passive mixer

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A CMOS resistive ring mixer MMICs for GSM 900 and DCS 1800 base station applications

Cited by 28 publications

References 6 publications

0.25 &#x03BC;m CMOS resistive ring subthreshold mixer

0.25 &#x03BC;m CMOS resistive ring subthreshold mixer

0.25-μm BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

0.18‐μm CMOS wideband passive mixer

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Product

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0.25 μm CMOS resistive ring subthreshold mixer

0.25 μm CMOS resistive ring subthreshold mixer