A CMOS Schottky barrier diode with the four-sided cathode

Shi, Junyu; Cui, Dasheng; Lv, Xin

doi:10.1109/icam.2016.7813572

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…Common source and drain contacts in state-of-the-art FinFETs rely on the formation of titanium silicide (TiSi) [1]- [3]. TiSi provides a very low Schottky barrier height (SBH) to silicon, that's why it is also highly appropriate for Schottky diodes in zero bias detector and mixer applications up to THz frequencies [4], [5]. The low barrier height makes TiSi very promising for further contact resistance reductions to NMOS and PMOS devices [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Stelzer

Jung

Wurstbauer

et al. 2019

IEEE J. Electron Devices Soc.

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Titanium silicide (TiSi) contacts are frequently used metal-silicon contacts but are known to diffuse into the active region under high current density stress pulses. Recently, we demonstrated that graphenic carbon (GC) deposited by CVD at 1000 • C on silicon has the same low Schottky barrier as TiSi, but a much improved reliability against high current density stress pulses. In this paper, we demonstrate now that the deposition of GC is possible at 100 • C − 400 • C by a sputter process. We show that the sputtered carbon-silicon contact is over 1 billion times more stable against high current density pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. SC can be doped by nitrogen (CN) and this results in an even lower resistivity and improved stability. Scalability of the CN thickness down to 5 nm is demonstrated. The finding that there is a low temperature approach for using the excellent carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a vast number of other applications.

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