A CNDO study of the spectral effects of B-bonding in complexes

Соколова, И. В.; Orlovskaya, L. V.

doi:10.1007/bf01208680

Cited by 1 publication

(1 citation statement)

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“…Actually theories of recombination at dislocations differ mainly by the step(s) which they take as rate controlling and whether the reemission from the shallow levels back into the bands is taken into account or not [12, 181. Here we quote only the model used by Wilshaw and coworkers [2,12,131 in their successful analysis. The authors assume holes to be captured into bound hole states by a cascade process as calculated by Sokolova [19] and that step two for holes is a fast process due to the strong overlap of shallow and deep states at the dislocation. Electrons are assumed to jump (over the barrier) directly from conduction band states into the deep dislocation states.…”

Section: Recombination Via Charged Dislocations In N-type Siliconmentioning

confidence: 99%

EBIC Microscopy Applied to Glide Dislocations)

Alexander

Dietrich

Hühne

et al. 1990

phys. stat. sol. (a)

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In most investigations of dislocations by EBIC microscopy contrat seems to be caused by impurity atoms segregated to the dislocations. But principally also intrinsic acceptors along the dislocation should be detectable by EBIC microscopy. In both the cases the space charge cylinder (SCC) around the charged dislocation acts as capture region. It is shown, that highly dislocated sheets of silicon acta as two dimensional diodes and conductors. Using screw‐dislocations in GaAs inclined to the surface an upper limit is determined for the radius of the SCC (50 nm) and the reduced minority carrier lifetime (7 × 10− 12 s). For GaAs a dependence of the diffusion length on the beam current is found.

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Section: Recombination Via Charged Dislocations In N-type Siliconmentioning

confidence: 99%