A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices

Lapham, Paul; Badami, Oves; Medina-Bailón, Cristina; Adamu-Lema, Fikru; Dutta, Tapas; Nagy, Daniel; Georgiev, Vihar P.; Asenov, A.

doi:10.23919/sispad49475.2020.9241606

Cited by 2 publications

(1 citation statement)

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“…Finally, different enhanced modules and solvers [22] are currently under development in NESS including: density gradient; extension of the KG module [34] to consider ionized impurity and alloy scattering mechanisms; implementation of surface roughness scattering mechanism in the existing NEGF module [42]; Kinetic MC solver [43,44] for the simulation of memory devices; and a module to compute the gate leakage current.…”

Section: Overview Of Nessmentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

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The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

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Section: Overview Of Nessmentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

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TCAD Simulation of Novel Semiconductor Devices

Dutta

Medina-Bailón

Rezaei

et al. 2021

2021 IEEE 14th International Conference on ASIC (ASICON)

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Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further, the ability of the tools to incorporate different modeling paradigms and to be applicable to a wide range of device architectures and operating conditions is essential. In this paper, we provide an overview of the new device simulator NESS (Nano-Electronic Software Simulator) developed at the University of Glasgow's Device Modelling Group. It is a fast and modular TCAD tool with flexible architecture and structure generation capabilities, and contains different modules including classical, semi-classical, and quantum transport solvers, mobility calculation, kinetic Monte-Carlo and others. NESS can also take into account various sources of statistical variability in nanodevices and can perform simulations of thousands of microscopically different devices created by the structure generator. This state-of-the-art tool is designed to be open source and is being made available to the device engineering community at large for active collaboration and development.

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A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices

Cited by 2 publications

References 15 publications

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

TCAD Simulation of Novel Semiconductor Devices

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