A combined scanning probe microscope

Lányi, Š.; Hruškovic, Miloslav

doi:10.1063/1.1488678

Cited by 9 publications

(3 citation statements)

References 13 publications

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“…The Scanning Capacitance Microscopes sense the capacitance between a sharp tip and the imaged bare or insulator-coated conducting surface [1][2][3][4][5][6][7]. They have found many applications, such as dopant profiling or pn junction delineation in semiconductors [5,[8][9][10][11][12][13], anal- * E-mail: lanyi@savba.sk (Corresponding author) ysis of laser structures [14] or quantum wells [15,16], or even whole wafer processing [17].…”

Section: Introductionmentioning

confidence: 99%

Local capacitance analysis using a modified deep level spectrometer

Dózsa¹,

Lányi²

2012

Open Physics

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Abstract:A bimorph-based xz scanner and an amplifier, increasing the capacitance and current measurement sensitivities 250-times and 1000-times, respectively, have been built into the cryostat of a deep level transient spectrometer. The setup renders point by point local capacitance-voltage (C-V) at 1 MHz and dc currentvoltage (I-V) measurements using a sharp tip placed into tunnelling distance from the surface of analysed semiconductor sample. The C-V measurements revealed a strong dependence on the probe/sample separation, ranging from MOS-type at small tunnelling currents to Schottky-type at currents exceeding approximately 10 pA. Marked hysteresis was observed, indicating changes of surface state occupancy. These slow states are otherwise hardly detected, since they are absent in semiconductor/metal contacts and in MOS structures they would become mostly passivated interface states. The setup enables calibrated, fixed zero level capacitance measurement. The stray capacitance is the dominant component of the measured capacitance but it can be easily discarded.

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Section: Introductionmentioning

confidence: 99%

Local capacitance analysis using a modified deep level spectrometer

Dózsa¹,

Lányi²

2012

Open Physics

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“…Most capacitance sensors use an optimized version of the RCA video disc capacitance pickup that operates at 915 MHz (21). Other modules which measure capacitance directly using low-frequency bridge techniques have also been demonstrated (23,24). However, they are very slow and suffer severely from problems due to changes of stray capacitances or light induced effects (24,25).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers

et al. 2010

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The use of scanning probe microscopy (SPM) techniques for the electrical characterization of high-k dielectric layers is reviewed, focusing on conductive atomic force microscopy (cAFM) and scanning capacitance microscopy (SCM). It is demonstrated exemplarily for ZrO2 high-k layer stacks that cAFM enables a detailed analysis of the morphological and electrical layer characteristics. Film morphologies can be determined even for surfaces where topography mapping can not detect distinct surface roughness like grain structures. For as-deposited amorphous layers, the current distribution is random whereas increased leakage currents at grain boundaries can be observed for nano-crystalline samples. The dominant current mechanisms through the layers can be determined from current voltage curves at distinct local points. Comparison with conventional techniques proofs the findings by cAFM. The quantitative interpretation of SCM measurement results often suffers from parasitic capacitances and light induced effects. Local thickness variation of dielectrics, however, can be detected very sensitively.

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“…The measurement of the complex impedance between tip and sample and simultaneous STM and SCM measurements have also been demonstrated. 10,11 In AFM experiments, the voltage dependent part of the force between the tip and the sample can be interpreted in terms of capacitance. 12,13 For samples with a tip-potential dependent capacitance it is possible to use a low-frequency ac voltage between tip and sample to modulate the capacitance in order to discriminate the local signal from the stray part.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature and high magnetic field dynamic scanning capacitance microscope

Baumgärtner

Suddards

Mellor

2009

Review of Scientific Instruments

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We demonstrate a dynamic scanning capacitance microscope (DSCM) that operates at large bandwidths, cryogenic temperatures, and high magnetic fields. The setup is based on a noncontact atomic force microscope (AFM) with a quartz tuning fork sensor for the nonoptical excitation and readout in topography, force, and dissipation measurements. The metallic AFM tip forms part of a rf resonator with a transmission characteristics modulated by the sample properties and the tip-sample capacitance. The tip motion gives rise to a modulation of the capacitance at the frequency of the AFM sensor and its harmonics, which can be recorded simultaneously with the AFM data. We use an intuitive model to describe and analyze the resonator transmission and show that for most experimental conditions it is proportional to the complex tip-sample conductance, which depends on both the tip-sample capacitance and the sample resistivity. We demonstrate the performance of the DSCM on metal disks buried under a polymer layer and we discuss images recorded on a two-dimensional electron gas in the quantum Hall effect regime, i.e. at cryogenic temperatures and in high magnetic fields, where we directly image the formation of compressible stripes at the physical edge of the sample.

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A combined scanning probe microscope

Cited by 9 publications

References 13 publications

Local capacitance analysis using a modified deep level spectrometer

Local capacitance analysis using a modified deep level spectrometer

(Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers

Low-temperature and high magnetic field dynamic scanning capacitance microscope

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