A compact 2048x1536 pixel infrared imager for long distance surveillance

Chevalier, C.; Blanchard, Nathalie; Martel, Anne; Terroux, Marc; Vachon, Carl; Mercier, Luc; Gagnon, Lise; Tremblay, Bruno; Marchese, Linda; Bergeron, Alain

doi:10.1117/12.974786

Cited by 4 publications

(2 citation statements)

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“…Uncooled thermal imaging focal plane arrays (FPAs) have attracted worldwide attention and become a dominant technology for commercial thermal imaging applications such as scientific research, medical imaging, even consumer electronics, and automotive assisted driving [1][2][3][4][5] due to the low cost, small size, light weight, and high reliability. Nowadays, the thermosensitive devices in most mass-produced uncooled FPAs [6,7] are vanadium oxide (VOx) [8][9][10] or amorphous silicon (α-Si) microbolometers [11][12][13][14]. Although the VOx/α-Si microbolometers dominate the commercial market due to their high sensitivity [15,16], the complex fabrication process of these bolometers based on microelectromechanical systems (MEMS) and the need for specific production lines limit their large-scale use in the civilian field.…”

Section: Introductionmentioning

confidence: 99%

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Guo

Jiang

et al. 2022

Micromachines

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Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 ´ 109 cmHz1/2/W at 25 μA and a maximum of 6.2 ´ 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.

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Section: Introductionmentioning

confidence: 99%

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Guo

Jiang

et al. 2022

Micromachines

View full text Add to dashboard Cite

show abstract

“…The specifications are summarized in Table 1. [2][3][4][5][6] The optics are very compact, but still provide enough room to insert a shutter for calibration purposes. Achieving good optical performance while allowing enough space for the shutter was a challenge for the optical design, as was reducing the effective thickness of the shutter.…”

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confidence: 99%