A compact 3D silicon interposer package with integrated antenna for 60GHz wireless applications

Lamy, Yann; Dussopt, Laurent; Bouayadi, O. El; Ferrandon, C.; Siligaris, Alexandre; Dehos, Cédric; Vincent, Pierre

doi:10.1109/3dic.2013.6702345

Cited by 12 publications

(3 citation statements)

References 11 publications

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“…[20] The 60GHz silicon interposer developed by LETI in France integrates the T/R micro-system as shown in Figure 3. [21]. The TSV interposer adopts 120μm high resistance silicon material as the substrate， and the diameter of the via is about 60μm, and the thickness of the conformal electroplated copper metal layer in the via is not more than 10μm.…”

Section: Introductionmentioning

confidence: 99%

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Review of RF microsystem packaging process technology

Cui,

Yuan

et al. 2024

J. Phys.: Conf. Ser.

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The 3-D heterogeneous integration technology of microsystem is the best technical means to achieve higher integration, higher performance and higher working frequency of radio frequency (RF) electronic system. RF microsystem integration technology is categorized into three main types based on the packaging substrate: silicon-based, ceramic-based, and resin-based. In this work, the principle of RF microsystem integration technology is demonstrated in detail, and the process routes and characteristics of different packaging structures are clarified. Moreover, through the multi-dimensional comparison of different packaging structures, the application conditions of specific packaging structures are obtained. According to the comprehensive evaluation, the resin-based embedded chip package shows outstanding potentials in RF performance, integration capability, batch production capability and process cost. However, there are three shortcomings that limit its application in RF microsystems: Firstly, in terms of the universality of RF chips, metal grounding on the back of RF chips cannot be realized by this packaging, and special design of RF chips is required. At present, however, the universal chip with gold back grounding on the market cannot meet the requirements of the packaging process. Secondly, because of the high cost of customized chips, this packaging process is not suitable for small-scale production. Thirdly, the resin-based package does not have the sealing function, thus reliability of the product still needs to be verified. Ceramic-based RF microsystems do not require customized chips and have advantages in chip versatility compared to resin-based systems, with integration capabilities comparable to resin-based systems. However, its batch production capacity is much lower than resin based. In contrast, the silicon-based embedded chip package is as excellent as the resin-based products in chip versatility, RF performance, integration capability, batch production capability, etc., except that the manufacturing cost is high, and the yield should be effectively guaranteed in the manufacturing process. The conclusion provides a guidance for the future research of RF microsystem integration technology.

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Section: Introductionmentioning

confidence: 99%

“…Figure 2Physical schematic of W-band radar assembly[20] The 60GHz silicon interposer developed by LETI in France integrates the T/R micro-system as shown in Figure3 [21]…”

mentioning

confidence: 99%

Review of RF microsystem packaging process technology

Cui,

Yuan

et al. 2024

J. Phys.: Conf. Ser.

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“…Traditionally, radio frequency (RF) SIP solution-based microwave printed circuit boards or high-performance ceramic substrates, such as HTCC (high temperature co-fired ceramics) and LTCC (low temperature co-fired ceramics), have faced challenges in terms of their precision of critical dimension and minimum size of redistribution lines and pitch. Due to the precise wiring capacity and the low mismach in material coefficient of thermal expansion (CTE), research works have been done to explore the feasibility as well as the technical advantage of TSV technology for RF application [ 2 , 3 , 4 , 5 , 6 ]. It has been found that the RF property of TSV becomes the key issue in this field as the natural property of Si as semiconductor, which is characterized in term of S-parameters.…”

Section: Introductionmentioning

confidence: 99%

A RF Redundant TSV Interconnection for High Resistance Si Interposer

Wang

Jin

et al. 2021

Micromachines

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Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

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Antenna‐in‐Package Design for Wireless System on a Chip

Zhang

2022

Antenna and Array Technologies for Future Wireless Ecosystems

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A compact 3D silicon interposer package with integrated antenna for 60GHz wireless applications

Cited by 12 publications

References 11 publications

Review of RF microsystem packaging process technology

Review of RF microsystem packaging process technology

A RF Redundant TSV Interconnection for High Resistance Si Interposer

Antenna‐in‐Package Design for Wireless System on a Chip

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