A Compact Ku-Band Broadband GaAs Power Amplifier Using an Improved Darlington Power Stage

In this article, a 7–11.5 GHz 2‐W power amplifier (PA) based on cascode transistors is developed using 0.15‐µm GaAs pHEMT. This design facilitates impedance matching in the broadband range by using a cascode structure. A double‐cascode transistors structure is used as a unit cell to combine radio frequency voltage swings to achieve a broad bandwidth (BW). In addition, power synthesis techniques are used to achieve higher power output. Ultimately, based on the above two structures, a four‐way power‐synthesized PA is designed. The fabricated PA shows a peak power of 33.8 dBm at 9 GHz with a power‐added efficiency (PAE) of 43%. The output power is higher than 32 dBm at frequencies from 6 to 11.5 GHz with a PAE of more than 25%. The fractional 3‐dB output power BW is 80%. The chip area is 3.6 × 1.8 mm2, including the input and output test pads.

Section: Design Of the Output-matching Networkmentioning

confidence: 99%

“…Then 100 Ω will be matched to the load impedance 50 Ω by power synthesis. To achieve impedance matching in the broadband range, we used a two‐sections matching structure to ensure a lower Q contour 12 . The impedance matching process and the S‐parameters of the output matching network are shown in Figure 3.…”

Section: Circuit Designmentioning

confidence: 99%

Analysis and design of broadband 2‐W power amplifier based on cascode transistors

Li,

Yuan,

Yuan

et al. 2024

“…As an indispensable part of the communication system, the performance of the PA determines the performance of the communication equipment to a certain extent 1 . Highly efficient PAs are of great research importance in modern communications 2,3 .…”

Section: Introductionmentioning

confidence: 99%

“…As an indispensable part of the communication system, the performance of the PA determines the performance of the communication equipment to a certain extent. 1 Highly efficient PAs are of great research importance in modern communications. 2,3 The codesign of filters and PAs not only facilitates the miniaturization of communication equipment but also reduces circuit losses to improve the performance of communication systems.…”

Section: Introductionmentioning

confidence: 99%

A wideband power amplifier based on filtering matching for both input and output network

Cai,

Liang,

Gao

et al. 2024

Self Cite

A new input–output matching structure is presented in this article. The proposed method is used to realize a wideband high‐efficiency power amplifier. By combining the design of input–output matching network with a band‐pass filter, the fundamental and harmonic impedances are transformed to high efficiency region. In this case, a continuous Class‐F PA with wide bandwidth and high efficiency is obtained. Meanwhile, the bias circuit is also integrated in the matching network to simplify the wideband PA topology. After experimental verification, the fabricated PA has a measured drain efficiency of 62.2%–76.5% in the range of 1.35–2.8 GHz, with an output power of 39.1–42 dBm.

“…Recent advances in silicon technology 1–3 enable the possibility of silicon‐based mm‐wave communication beyond 100 GHz 4–8 . However, due to the limitation of the fabrication technology, the output power of the transmitter is indeed lower than the III–V group 9–12 . Thus, to replace the expensive III–V group chips with silicon‐based technology and hence realize the system on chip (SOC), designing a power amplifier (PA) with high output power is essential.…”

Section: Introductionmentioning

confidence: 99%

A four‐element 132–140 GHz PA array with 29.7 dBm EIRP in 0.13‐µm SiGe technology

Meng

Liu

et al. 2022

This paper presents a 132–140 GHz power amplifier (PA) array in 0.13‐µm SiGe BiCMOS technology. The four dielectric‐loaded end‐fire antennas are integrated with the PA array on chip. With the absence of the lossy power combining networks at the output, the presented PA array achieves a measured maximal effective isotropic radiated power of 29.7 dBm. The array size is only 6.14 × 2.49 mm2 and consumes 5.16 W from a single 4 V DC supply.