A Compact Model of Metal–Ferroelectric-Insulator–Semiconductor Tunnel Junction

Tung, Chien-Ting; Pahwa, Girish; Salahuddin, Sayeef; Hu, Chenming

doi:10.1109/ted.2021.3130857

Cited by 6 publications

(1 citation statement)

References 22 publications

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“…Recently, the stackable 3D flash-like-FTJ structure has been proposed, using a cylindrical structure FTJ, which is different from the planar FTJ adopted in the crossbar structure. [16][17][18][19][20] The cylindrical FTJ structure enhances the effective area and current levels, significantly increasing the tunnel electroresistance (TER) ratio. [21][22][23][24][25] However, research on the FE tunnel junctions with cylindrical structures is insufficient and the underlying physics of their TER improvement is unclear.…”

Section: Introductionmentioning

confidence: 99%

Performance comparison of planar and cylindrical ferroelectric tunnel junctions

Guo,

Li,

Chang

2024

Jpn. J. Appl. Phys.

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A comprehensive comparison of the electrical characteristics between the planar (P-FTJ) and cylindrical ferroelectric tunnel junction (C-FTJ) is conducted based on physical modeling and simulation. The FTJ architecture is consisted of metal-ferroelectric-dielectric-metal stacks. Two configurations of C-FTJ are considered depending on whether the position of ferroelectric layer is close or away from the inner electrode. The differences between the P-FTJ and C-FTJs in the distributions of the electric field and ferroelectric polarization are analyzed. The resultant tunneling electroresistance (TER) are explored as a function of the inner radius, ferroelectric thickness, dielectric thickness, and remnant polarization. These simulation results offer physical insights into achieving highly integrated three-dimensional storage structures through improving the TER ratio.

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