A Compact Noise Model for C-CNTFETs

Marani, Roberto; Gelao, G.; Perri, Anna Gina

doi:10.1149/2.0341704jss

Cited by 27 publications

(35 citation statements)

References 22 publications

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“…8 it has been shown that shot noise mainly contributes to the total noise over all frequency range. This trend has been reported in [6,30,43], while flicker noise does at low frequencies, the same trend has been found in [30,[35][36][37].…”

Section: Resultssupporting

confidence: 85%

Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an electrical equivalent circuit for CNTFETs. The equivalent circuit is used to model the dynamic and noise performance at low-and highfrequency of different CNTFET technologies, considering extrinsic and intrinsic device parameters as well as the contact resistance. The estimation of the contact resistance at the metal/CNTs interfaces is obtained from a Y-function based extraction method. The noise model includes four noise sources: thermal noise, thermal channel noise, shot channel noise and flicker noise. The proposed model is compared with a compact model calibrated to hysteresis-free experimental data from a high-frequency multi-tube (MT)-CNTFET technology. Additionally, it has been applied to experimental data from another fabricated MT-CNTFET technology. The comparison in both cases shows a good agreement between reference data (simulation and experimental) and results from the proposed model. Low-and high-frequency noise projections of the fabricated reference device are further studied. Noise results from both studied technologies show that shot noise mainly contributes to the total noise due to the presence of Schottky barriers at contacts and along the channel.

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Section: Resultssupporting

confidence: 85%

Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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show abstract

“…Regards to noise model, in [26] we have proposed a compact noise model of CNTFET, and therefore we suggest the reader to consult this paper. Fig.…”

Section: Cntfet Noise Modelmentioning

confidence: 99%

A Simulation Study of Noise Behavior in Basic Current Mirror using CNTFET and MOSFET

Marani¹,

Perri²

2021

IJETAE

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“…In our model we implemented the noise generator according to the theory widely illustrated in [23], where we have proposed a compact noise model of CNTFET, and therefore we suggest the reader to consult this paper [23].…”

Section: B Stanford Modelmentioning

confidence: 99%

Comparative Analysis of CNTFET Models through the Design of a Differential Amplifier

Gelao¹,

Marani²,

Perri³

2021

IJETAE

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In this paper we compare simulation results on a differential pair circuit using a CNTFET model, already proposed by us, with the result obtained using Stanford model. We study the case of differential pair with differential input and single ended output as core of a 50 GHz amplifier for mm waves band. We consider the case of a CNTFET having a single CNT tube with indices (19,0) and 25 nm long. For this circuit we present result for its main parameters: gain, input impedance, output impedance, noise and distortion. Since the Stanford model includes fixed capacitance, for comparison we applied the same capacitance on our model. Since this capacitances dominate the high frequency cut, results are not much different, except for the lack of noise modelling in the Stanford model.

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A Compact Noise Model for C-CNTFETs

Cited by 27 publications

References 22 publications

Small-signal parameters extraction and noise analysis of CNTFETs

Small-signal parameters extraction and noise analysis of CNTFETs

A Simulation Study of Noise Behavior in Basic Current Mirror using CNTFET and MOSFET

Comparative Analysis of CNTFET Models through the Design of a Differential Amplifier

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