A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations

Abstract

Fin-shaped field effect transistors (FinFETs) are considered to be a very attractive option to improve the performance of complementary metal-oxide-semiconductor devices into the sub-50-nm gate length regime. However, for those dimensions, quantum effects must be considered in order to develop accurate compact models useful for circuit simulations. In this paper, we study the influence of the quantum effects on dc, Radio frequency (rf), and microwave noise for nanoscale FinFET transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional Schrödinger and Poisson equations. rf and noise performances are calculated using the active transmission line method. Comparison between classical and quantum charge control and between drift-diffusion and hydrodynamic models is carried out.

Analytical high frequency GaN HEMT model for noise simulations

“…This method allows us to construct a non-quasi static device model from quasi static device model [19]. It has been used for modeling the radio frequency and noise behavior of several semiconductor devices such as: DG-MOSFETs [20,21], Fully depleted SOI MOSFETs [22], FiNFETs [23], and GAA MOSFETs [24]; by using in each segment specific equations of local quasi static small-signal parameters derived by taking into account the unique structure and physical principle of each device. In this paper we adapted this modeling approach to GaN HEMT devices for the first time.…”

Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET

“…The electrical characteristics are performed by considering Drift-Diffusion Mode-Space Method (DD_MS). The DD_MS model is a semi classical approach to transport in devices with strong transverse confinement [8]. Models for mobility, recombination and impact ionization are included for simulation [8]- [9].…”

“…The DD_MS model is a semi classical approach to transport in devices with strong transverse confinement [8]. Models for mobility, recombination and impact ionization are included for simulation [8]- [9]. A self consistent solution of 2-D Schrödinger and Poisson's equation is solved for Tri gate FinFETs shown in Fig.1 and quantum charge control expression is obtained.…”

High-frequency compact analytical noise model of gate-all-around MOSFETs

“…The small-signal parameters and noise sources expressions for each slice can be derived from the basic semiconductor equations. The method was used for noise modeling in other devices, such as MESFETs [15], HEMTs [16], MOSFETs, SG SOI [10,17], DG MOSFETs [10][11][12], GAA [12,18] and FinFETs [19]. We will use this method to describe the small-signal and noise equivalent circuit.…”