Articles you may be interested inTwo-dimensional quantum mechanical modeling of silicide-silicon contact resistance for nanoscale silicon-oninsulator metal-oxide-semiconductor field effect transistor Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 108, 064512 (2010); 10.1063/1.3483279 High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 105, 074505 (2009); 10.1063/1.3093884High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistorIn this paper, we present an analytical model for high frequency and microwave noise model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Radio-frequency and noise performances are calculated using an active transmission line method. A comparison is made between classical and quantum charge control and between drift diffusion and hydrodynamic models.

Articles you may be interested inThreshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 112, 024513 (2012); 10.1063/1.4737779 Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 100, 033501 (2012); 10.1063/1.3678023 High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 105, 034510 (2009); 10.1063/1.3077279Theoretical consideration for carrier transport noise in nonequilibrium steady-state operation of metal-oxide-semiconductor field-effect transistorThe surrounding gate ͑SGT͒ metal-oxide-semiconductor field-effect transistor is one of the most promising candidates for the downscaling of complementary metal-oxide-semiconductor technology toward the sub-50-nm channel length range since the SGT architecture allows excellent control of the channel charge in the silicon film, thus reducing short channel effects. However, at these dimensions, quantum effects must be considered in order to develop accurate compact models useful for circuit simulations. In this paper we study the influence of quantum effects on dc, radio frequency ͑rf͒, and microwave noise for nanoscale SGT transistors including nonstationary effects. We present an analytical charge model for adjusting the charge control computed from the self-consistent solution of the two-dimensional Schrödinger and Poisson equations. rf and noise performances are calculated using the active transmission line method. We compared, on the one hand, classical and quantum charge control models and, on the other, drift-diffusion and hydrodynamic transport models.

Silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are excellent candidates to become an alternative to conventional bulk technologies. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as double-gate (DG) MOSFETs. These devices could be used for high-frequency applications due to the significant increase in the transition frequency fT for these devices. For low noise radiofrequency and microwave applications, high-frequency noise models are required. In this work, we present compact expressions to model the drain and gate current noise spectrum densities and their correlation for DG MOSFETs. These expressions depend on the mobile charge densities that are obtained using analytical expressions obtained from modeling the surface potential and the difference of potentials at the surface and at the center of the Si doped layer without the need to solve any transcendental equations. Using this model, the DG MOSFET noise performances are studied. The current and noise models can be easily introduced in circuit simulators.

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Fin-shaped field effect transistors (FinFETs) are considered to be a very attractive option to improve the performance of complementary metal-oxide-semiconductor devices into the sub-50-nm gate length regime. However, for those dimensions, quantum effects must be considered in order to develop accurate compact models useful for circuit simulations. In this paper, we study the influence of the quantum effects on dc, Radio frequency (rf), and microwave noise for nanoscale FinFET transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional Schrödinger and Poisson equations. rf and noise performances are calculated using the active transmission line method. Comparison between classical and quantum charge control and between drift-diffusion and hydrodynamic models is carried out.