A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Abstract

Articles you may be interested inTwo-dimensional quantum mechanical modeling of silicide-silicon contact resistance for nanoscale silicon-oninsulator metal-oxide-semiconductor field effect transistor Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 108, 064512 (2010); 10.1063/1.3483279 High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 105, 074505 (2009); 10.1063/1.3093884High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistorIn this paper, we present an analytical model for high frequency and microwave noise model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Radio-frequency and noise performances are calculated using an active transmission line method. A comparison is made between classical and quantum charge control and between drift diffusion and hydrodynamic models.

High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors

“…This method has been used for noise modeling in other devices such as Metal Semiconductor Field Effect Transistors ͑MESFETs͒, Hih Electron Mobility Transistors ͑HEMTS͒, MOSFET, SG SOI, 13,16 and DG, 16 as well as SGT or GAA devices. 14 In the segmentation method or active transmission line analysis, the channel is divided into channel sections or slides.…”

“…14. In this paper, the models have been improved by taking into account a novel quantum charge control model and including the effect of the velocity overshoot through a one-dimensional energy-balance model, 15,16 the effect of the saturation region, the effect of the channel modulation length, and the mobility degradation produced by quantum effects.…”

“…The model is based on the concept of channel a͒ segmentation 13,16 and the formulations for drift-diffusion and temperature ͑hydrodynamic͒ transport models. We use the analytical expressions of the cutoff frequency f T and the maximum frequency of oscillation f max , and noise properties of the devices are discussed to analyze the high frequency performances; then we discuss the noise properties of the devices.…”

Analysis of Low Frequency Drain Current Model for Silicon Nanowire Gate-All-Around Field Effect Transistor

“…Average charge carrier's energy is estimated by mobility function that is a function of the temperature therefore electron mobility describes with simple and normal energy-balance process. Drain current transport model at room temperature which has been previously described and it has been applied to double gate MOSFETs is still applicable to GAA silicon nanowire fet [ 17], Drain current can be described in linear channel saturation region which is shown by given equation.…”

Analytical Modeling of Potential and Drain Current for Symmetric Double Gate (SDG) MOSFET Using Self Consistent Solution of 1-D Poisson's-Schrödinger Equations

“…While, the reported works [10][11][12][13] have evaluated the probability of finding the charge carriers in the active silicon region. The self-consistency between Poisson's and Schrödinger's equations is one of the main modeling challenges in nanoscale devices, but most of the models 12 13 ignore it.…”