High Frequency and Noise Model of Gate-All-Around MOSFETs

This work presents, a radio frequency (RF) performance evaluation of nanoscale gallium nitride-silicon-oninsulator fin field-effect transistor (GaN-SOI-FinFET). All the results have simultaneously been compared with conventional FinFET (Conv. FinFET). All the results show that the power gains have significantly improved in terms of Gma (maximum available power gain), Gms (maximum stable power gain), stern stability factor, GMT (maximum transducer power gain), and an appreciable reduction in intrinsic delay as compared to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX (maximum oscillator frequency) respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for highperformance RF applications.

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“…Further, cut-off frequency (fT) has been extracted from current gain plot at unity current gain [18] (shown in Fig. 3).…”

Section: Resultsmentioning

confidence: 99%

“…fMAX should be as high as possible for RF applications and can be calculated by Eq. ( 5) [18,23]: ( )…”

Section: Resultsmentioning

confidence: 99%

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Kumar

Gupta²,

Goyal

et al. 2022

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience &Amp; Nanotechnology (5NANO

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“…From Figure 5, it can be observed that K is greater than one at high frequency for the GaN-FinFET and conventional FinFET, and ~1 (slightly > 1) for the proposed device at a higher frequency; this is desirable for the designing of RF amplifiers. Further, cut-off frequency (fT) was extracted from the current gain plot at unity current gain [22] (shown in Figure 5a). fT can be defined by Equation ( 4) and it measures the swing and speed of high-speed digital applications [23][24][25]: Low-noise amplifier (LNA) designing is as important as power gains for RF amplifiers and in this way stability is the key parameter.…”

Section: Resultsmentioning

confidence: 99%

“…The maximum oscillator frequency (fMAX) was also evaluated at the unity unilateral power gain [26] (shown in Figure 5b). fMAX should be as high as possible for RF applications and can be calculated as in Equation ( 5) [22,27]: Further, cut-off frequency (f T ) was extracted from the current gain plot at unity current gain [22] (shown in Figure 5a). f T can be defined by Equation ( 4) and it measures the swing and speed of high-speed digital applications [23][24][25]:…”

Section: Resultsmentioning

confidence: 99%

Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

Kumar

Gupta²,

Goyal

et al. 2022

Micromachines

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In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains significantly improved in terms of Gma, Gms, Stern stability factor (SS), GMT, and intrinsic delay in comparison with conventional FinFET. Current gain and unilateral power gain were also evaluated for the extraction of fT (cut-off frequency) and fMAX, respectively. fT and fMAX were enhanced by 88.8% and 94.6%, respectively. This analysis was performed at several THz frequencies. Further, the parametric assessment was also performed in terms of gate length and oxide thickness to find the optimized value of gate length and oxide thickness. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

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“…For characterizing a device for tuned RF amplifiers and oscillators, maximum oscillation frequency is an important parameter to consider. f MAX is the maximum oscillation frequency which is defined as the frequency where the maximum unilateral power gain falls to unity (0 dB) [33].…”

Section: Rf Performance Metrics Inquisitionmentioning

confidence: 99%

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

2015

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In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOS-FET over SiNW MOSFET in terms of transconductance (g m ), cut-off frequency ( f T ), maximum oscillator frequency ( f MAX ), power gains (Gma, G MT ) parasitic capacitances, stern's stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in f T and f MAX ; and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device's RF performance at such aggressively scaled dimensions.

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High Frequency and Noise Model of Gate-All-Around MOSFETs

Cited by 7 publications

References 11 publications

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

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