High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor

Abstract

Silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are excellent candidates to become an alternative to conventional bulk technologies. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as double-gate (DG) MOSFETs. These devices could be used for high-frequency applications due to the significant increase in the transition frequency fT for these devices. For low noise radiofrequency and microwave applications, high-frequency noise models are required. In this work, we present compact expressions to model the drain and gate current noise spectrum densities and their correlation for DG MOSFETs. These expressions depend on the mobile charge densities that are obtained using analytical expressions obtained from modeling the surface potential and the difference of potentials at the surface and at the center of the Si doped layer without the need to solve any transcendental equations. Using this model, the DG MOSFET noise performances are studied. The current and noise models can be easily introduced in circuit simulators.

Circuit perspective of Terahertz Double-Gate MOSFET for switch

“…A mathematical expression of the potential is derived as a function of the doping concentration in ref. [11], thus a drain current expression is derived. The operation of DG MOSFET has various advantages such as scalability, device density, ideal subthreshold, high current drive, excellent transconductance (g m ), and controllability on the channels.…”

“…The double-gate (DG) MOSFET has two gates of the same size on substrate, so the packing density is higher [11]. In this work I have designed a DG MOSFET for the THz range.…”

Compact noise modelling for common double‐gate metal–oxide–semiconductor field‐effect transistor adapted to gate‐oxide‐thickness asymmetry

“…The cross‐correlation spectral density is given by [17, 19] where .…”

Review on double-gate MOSFETs and FinFETs modeling

“…Another interesting application of SDDGM was done in the field of microwave transistors. A high-frequency compact analytical noise model for DG MOSFETs was obtained using the SDDGM DC model [48] and the compact small-signal model for RF FinFETs, where the high frequency equivalent circuit model parameters were extracted from de SDDGM DC model [49], [50]. Transconductance curves in linear and saturation regimes are shown in Fig.…”