A compact SCR model using advanced BJT models and standard SPICE elements

Cao, Jian; Xu, Jingya; Wang, Yuan; Lu, Guangyi; Zhang, Xing

doi:10.1007/s11432-016-0072-3

Cited by 9 publications

(2 citation statements)

References 5 publications

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“…Thus, specific models need to be developed for these gate-controlled SCR devices. In the modeling process of ESD, two types of models are commonly used, namely, physics-based models with complex code [9][10][11][12][13][14][15][16], and simplified behavioral models [17,18]. Typically, physics-based models call for the development of complex parameter extraction methods based on high-current physical mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Bao,

Wang,

Liu

et al. 2024

Eng. Res. Express

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This paper delineates the implementation of a gate-controlled Silicon Controlled Rectifier (SCR) behavioral model using Cadence software. The model is designed to tackle the absence of gate-control effect characteristics in extant models. This enables more precise simulation of the snapback behavior of such gate-controlled SCR devices under electrostatic discharge (ESD) stress. This work fabricates three types of SCR devices: Traditional SCR(T-SCR), Single-Gate SCR (SG-SCR), and a Double-Gate SCR (DG-SCR). These devices are fabricated using the 0.18µm CMOS process and varied in the number of gates. The physical principles of the device are validated through two-dimensional electrical simulations. Furthermore, the model results are confirmed by the transmission line pulse (TLP) test results of the final device. The results demonstrate that the simulation results of the gate-controlled SCR behavioral model fit the TLP test results of the three SCR devices. The model's applicability across different number of fingers devices confirms its scalability. Further, the model was simulated with the HBM equivalent circuit, and the comparison with the actual results confirmed the model's applicability to HBM simulation.

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Section: Introductionmentioning

confidence: 99%

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Bao,

Wang,

Liu

et al. 2024

Eng. Res. Express

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“…The continous scaling down of integrated circuits (ICs) has made electrostatic discharge (ESD) protection critical and challenging [1][2][3][4][5]. A diode-triggered silicon controlled rectifier (DTSCR) can be used for ESD protection owing to its adjustable trigger voltage and lower parasitic capacitor [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

Zhang

Wang

et al. 2019

Sci. China Inf. Sci.

Self Cite

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A conventional diode-triggered silicon-controlled rectifier (DTSCR) structure with a layout strategy for electrostatic discharge (ESD) protection is presented and confirmed in a 65-nm CMOS technology. The modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing (TLP)/very fast transmission line pulsing (VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model (CDM) event. Keywords diode triggered silicon controlled rectifier (DTSCR), electrostatic discharge (ESD), transmission line pulsing (TLP), very fast transmission line pulsing (VF-TLP), turn-on behavior Citation Zhang L Z, Wang Y, Wang Y Z, et al. Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection.

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Modeling IC Snapback Characteristics Using a VCCS Model for Circuit-Level ESD Simulation

Wang

Yuan

2019

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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A compact SCR model using advanced BJT models and standard SPICE elements

Abstract: Relation between standard entropies of elements and electronic configurations Chinese Science Bulletin 44, 270 (1999);. LETTER. SCIENCE CHINA Information Sciences

Cited by 9 publications

References 5 publications

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

Modeling IC Snapback Characteristics Using a VCCS Model for Circuit-Level ESD Simulation

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