2012
DOI: 10.1002/mop.27086
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A compact wideband CMOS LNA with low power consumption

Abstract: In this letter, a wideband low noise amplifier (LNA) operating at 1–5 GHz is proposed.The circuit is designed with a TSMC 0.18‐μm RF CMOS process. To obtain high transconductance with low power consumption, two types of inverters are used. The proposed LNA is expected to reduce the size of chip about 70–80% by using only the single‐spiral inductor. The measured voltage gain is 14.4–15.5 dB and noise figure (NF) is 4.3–5.0 dB from 1–5 GHz. The total power consumption of the proposed LNA is 9.8 mW from a 1.4 V s… Show more

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Cited by 2 publications
(5 citation statements)
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“…Thus, as G m increases, the voltage gain increases, which affects the input impedance matching in (1).…”
Section: Input Impedance Voltage Gain and Nfmentioning
confidence: 99%
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“…Thus, as G m increases, the voltage gain increases, which affects the input impedance matching in (1).…”
Section: Input Impedance Voltage Gain and Nfmentioning
confidence: 99%
“…The inverter‐structure amplifier is widely used in digital and analog amplifiers for high gain and low power consumption in the CMOS process . It consists of NMOS and PMOS transistors with a back‐to‐back drain and a combined gate.…”
Section: Introductionmentioning
confidence: 99%
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