A Compact Wideband CMOS Low-Noise Amplifier Using Shunt Resistive-Feedback and Series Inductive-Peaking Techniques

Abstract

A wideband low-noise amplifier (LNA) with shunt resistive-feedback and series inductive-peaking is proposed for wideband input matching, broadband power gain and flat noise figure (NF) response. The proposed wideband LNA is implemented in 0.18-m CMOS technology. Measured results show that power gain is greater than 10 dB and input return loss is below 10 dB from 2 to 11.5 GHz. The IIP3 is about +3 dBm, and the NF ranges from 3.1 to 4.1 dB over the band of interest. An excellent agreement between the simulated and measured results is found and attributed to less number of passive components needed in this circuit compared with previous designs. Besides, the ratio of figure-ofmerit to chip size is as high as 190 (mW 1 mm 2 ) which is the best results among all previous reported CMOS-based wideband LNA.

An Wideband GaN Low Noise Amplifier in a 3×3 mm2Quad Flat Non-leaded Package

“…This proposed FoM is based on the FoMs in [5] and [7]. In LNA design, if devices have high unity current gain frequency (f T ), low NF can be easily achieved because NF is inverse proportional to f T [8], so that f T is at the denominator in the FoM.…”

“…Because of the high cost of GaN IC technology, the size of chip die is added in the FoM. In this work, the FoM is improved to make fair comparison by including linearity parameter, OIP3, which was not considered in [5] and [7]. When small DC power is used, obviously FoM is high even if OIP3 is low.…”

“…The degeneration inductor at the source (L s ) and the inductor at the gate (L g ) of M 1 are used to achieve low NF and return loss. The NF of the LNA without the resistive feedback can be expressed by [5]:…”

Design and implementation of UWB CMOS LC filters LNA for carrier less impulse radio receivers

“…This way, practical inductor values leading to high SFR value and high Q factor can be chosen according to the LNA operating bandwidth. Once the values of inductors L 1 and L 2 are fixed, relations (1)(2)(3)(4)(5)(6)(7)(8)(9) give the input matching cell element values for a given power consumption and a given value of the degeneration inductance L S .…”

“…In addition a constant group delay is required in the signal bandwidth to maintain the signal integrity of the pulsed wideband signal. Wide band CMOS LNA have been designed by using several topologies: distributed amplifiers [1,2], feedback amplifiers [3][4][5], common gate [6][7][8], or LC ladder filters LNA [9]. Beside the others topologies, LC ladder filter LNA allow constant gain and group delay in a well controlled bandwidth.…”