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MEMS capacitor switches have been integrated with 50V-LDMOS/5V-CMOS 0.18µm generation ICs. The MEMS were formed with the final three Ti-cladded AlCu wiring levels in SiO 2 using a novel planar sacrificial silicon cavity process [1][2][3]. The MEMS cavities were hermetically sealed at less than atmospheric pressure at wafer level with a CVD dielectric lid. After Pb-free solder bumping, the MEMS chips are packaged in organic laminate packages. The capacitor portion of the MEMS beam has a capacitance density of ~0.12fF/µm 2 and the pull-in, restoring, selfactuation, and break down voltages are on the order of 30V, 10V, >45V, and >150V for 0.2pF devices, respectively. MEMS cycling lifetime of 500 million cycles has been demonstrated. This paper summarizes the critical integration, yield, and reliability issues associated with the L1 qualification of this HV CMOS [4], RF MEMS technology.

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