A comparative device performance assesment of CVD grown MoS2 and WS2 monolayers

Şar, Hüseyin; Özden, Ayberk; Yorulmaz, Büşra; Sevik, Cem; Perkgöz, Nihan Kosku; Ay, F.

doi:10.1007/s10854-018-8895-5

Cited by 21 publications

(13 citation statements)

References 33 publications

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“…C g can be defined as

C_{g} = \frac{ε_{g}}{t_{g}}

where ε g is the dielectric constant and t g is the thickness of the gate oxide. [ 45 ] The calculated μ FE values are 7.02 and 18. 21 cm 2 V −1 s −1 for the negatively and positively biased devices, respectively, which are rather high carrier mobilities for our device architecture and measurement conditions.…”

Section: Resultsmentioning

confidence: 99%

“…21 cm 2 V −1 s −1 for the negatively and positively biased devices, respectively, which are rather high carrier mobilities for our device architecture and measurement conditions. [ 45 ] The fabricated devices provide a significantly high current ON/OFF ratio of ≈10 5 and very low SS values of 315 and 325 mV dec −1 under positive and negative biases, respectively. The characteristic curves ( I DS ‐ V DS ) of the MoS 2 ‐only and MoS 2 ‐CQWs based devices are given in Figures 2c and 2d, respectively, for the gate modulation voltage swept from V BG = −5.0 to 5.0 V with an interval of 0.5 V. To further examine effect of the sensitization layer (i.e., CQWs layer) on the output characteristics of the devices under dark condition, we swept V DS voltage from −3.0 to 3.0 V. Later, the maximum saturation currents ( I DSS ) were measured before and after of the CQWs layer deposition and the measured values are found very close to each other, indicating that the CQWs layer does not cause any observable modification without illumination.…”

Section: Resultsmentioning

confidence: 99%

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MoS₂ Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

Şar

Taghipour

Lisheshar

et al. 2020

Advanced Optical Materials

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A phototransistor built by the assembly of 2D colloidal semiconductor quantum wells (CQWs) on a single layer of 2D transition metal dichalcogenide (TMD) is displayed. This hybrid device architecture exhibits high efficiency in Förster resonance energy transfer (FRET) enabling superior performance in terms of photoresponsivity and detectivity. Here, a thin film of CdSe/CdS CQWs acts as a sensitizer layer on top of the MoS2 monolayer based field‐effect transistor, where this CQWs–MoS2 structure allows for strong light absorption in CQWs in the operating spectral region and strong dipole‐to‐dipole coupling between MoS2 and CQWs resulting in enhanced photoresponsivity of one order of magnitude (11‐fold) at maximum gate voltage (VBG = 2 V) and two orders of magnitude (≈ 5 × 102) at VBG = −1.5 V, and tenfold enhanced specific detectivity. The illumination power‐dependent characterization of this hybrid device reveals that the thin layer of CQWs dominates the photogating mechanism compared to the photoconductivity effect on detection performance. Such hybrid designs hold great promise for 2D‐material based photodetectors to reach high performance and find use in optoelectronic applications.

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“…C g can be defined as

C_{g} = \frac{ε_{g}}{t_{g}}

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

MoS₂ Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

Şar

Taghipour

Lisheshar

et al. 2020

Advanced Optical Materials

Self Cite

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show abstract

“…The 2D materials grown on semiconductors or insulating substrates can be directly used in subsequent applications. Figure 60 is a schematic diagram of a CVD method for growing MoS 2 and WS 2 on the surface of SiO 2 /Si substrates [ 396 ]. Lee et al synthesized a 0.72 nm thick single layer of MoS 2 using MoO 3 and element S at 650 °C in a one-step bottom-up method [ 397 ].…”

Section: Two-dimensional Materialsmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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“…Within this scope, 2D materials have been the most promising candidates to fulfill these demands 10 . The emerging 2D layered materials are currently at the center of intensive research efforts owing to their superior physical properties such as high carrier mobility 11 , 12 , broadband optical response 13 , large Young’s modulus 14 , 15 and high thermal conductivity 16 . In addition, the broad optical spectral range covered by 2D materials make them very promising for photonic and optoelectronic applications 17 .…”

Section: Introductionmentioning

confidence: 99%

In-plane anisotropic third-harmonic generation from germanium arsenide thin flakes

Şar¹,

Gao²,

Yang³

2020

Sci Rep

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A newly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest due to its promising highly in-plane anisotropic crystal structure and electronic properties for photonic and optoelectronic applications. The potential of 2D layered GeAs for many applications such as anisotropic photodetection, electronics, superconductivity and thermoelectricity is being investigated in recent studies. However, the intrinsic nonlinear optical properties of 2D layered GeAs have not been explored yet. Here, thickness-and incident polarization-dependent in-plane anisotropic third-harmonic generation (THG) from the mechanically exfoliated thin GeAs flakes is reported. Furthermore, the effect of the flake thickness on the THG conversion efficiency is shown to find the optimal thickness range for high conversion efficiency. The polarization state of the emitted THG signal is also analyzed by measuring the Stokes parameters with different polarization states of the pump beam to demonstrate the capability of controlling the intensity and polarization of TH emission. our results will create new opportunities for advancing anisotropic optical devices used for future photonic integration, optical communication and optical information processing. Nonlinear optical materials play a progressively significant role on the development of important photonic devices, for example, ultrafast lasers 1 , soliton generators 2 , optical modulators 3 and optical multiplexers 4 , which are extensively used in many applications of medicine, industry, communication and imaging 4,5. Although the traditional bulk nonlinear optical materials such as beta barium borate (β-BaB 2 O 4) 6 and lithium niobite (LiNbO 3) 3 have been widely used, these materials are greatly limited by low conversion efficiency, low nonlinear optical susceptibility and bulky crystal size. It is crucially important to search for nonlinear optical materials with both high conversion efficiency and compact crystal size, which can be integrated into the future nanoscale photonic and quantum chips 7-9. Within this scope, 2D materials have been the most promising candidates to fulfill these demands 10. The emerging 2D layered materials are currently at the center of intensive research efforts owing to their superior physical properties such as high carrier mobility 11,12 , broadband optical response 13 , large Young's modulus 14,15 and high thermal conductivity 16. In addition, the broad optical spectral range covered by 2D materials make them very promising for photonic and optoelectronic applications 17. Besides the linear optical properties, 2D materials exhibit strong optical nonlinearities which endows them as promising nonlinear optical materials 10,18,19 which have been used for saturable absorption (SA) 20 , second-harmonic generation (SHG) 21 , THG 22,23 , self-phase modulation 24,25 , nonlinear Kerr effect 26,27 and four-wave mixing (FWM) 28. Beyond graphene, 2D transition metal dichalcogenides (TMDs) such as MoS 2 21,29-31 and WSe 2 32,33 , he...

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A comparative device performance assesment of CVD grown MoS2 and WS2 monolayers

Cited by 21 publications

References 33 publications

MoS₂ Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

MoS₂ Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

State of the Art and Future Perspectives in Advanced CMOS Technology

In-plane anisotropic third-harmonic generation from germanium arsenide thin flakes

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A comparative device performance assesment of CVD grown MoS2 and WS2 monolayers

Cited by 21 publications

References 33 publications

MoS2 Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

MoS2 Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

State of the Art and Future Perspectives in Advanced CMOS Technology

In-plane anisotropic third-harmonic generation from germanium arsenide thin flakes

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Product

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MoS₂ Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells

MoS₂ Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells