The structural stability of 2D transition metal dichalcogenide (TMD) formations is of particular importance for their reliable device performance in nano-electronics and opto-electronics. Recent observations show that the CVD-grown TMD monolayers are likely to encounter stability problems such as cracking or fracturing when they are kept under ambient conditions. Here, two different growth configurations are investigated and a favorable growth geometry is proposed, which also sheds light onto the growth mechanism and provides a solution for the stability and fracture formation issues for TMDs specifically for MoS 2 monolayers. It is shown that 18 months naturally and thermally aged MoS 2 monolayer flakes grown using specifically developed conditions, retain their stability. To understand the mechanism of the structural deterioration, two possible effective mechanisms, S vacancy defects and growth-induced tensile stress, are assessed by the first principle calculations where the role of S vacancy defects in obtaining oxidation resistant MoS 2 monolayer flakes is revealed to be rather more critical. Hence, these simulations, time-dependent observations and thermal aging experiments show that durability and stability of 2D MoS 2 flakes can be controlled by CVD growth configuration.Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors such as monolayer or few-layer MoS 2 , WS 2 , MoSe 2 , etc. have attracted significant attention due to their potentially disruptive electronic and optical properties. In particular, researchers have put significant effort to adopt these materials in future optoelectronic and photonic applications. [1,2]

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In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ‐Raman, µ‐photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS2 films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain‐boundaries.

Two-dimensional (2D) material of silicon phosphide (SiP) has recently been shown as a promising optical material with large band gap, fast photoresponse and strong anisotropy. However, the nonlinear optical properties of 2D SiP have not been investigated yet. Here, the thickness-dependent in-plane anisotropic third-harmonic generation (THG) from the mechanically exfoliated 2D layered SiP flakes is reported. The crystal orientation of the SiP flake is determined by the angle-resolved polarized Raman spectroscopy. The angular dependence of the THG emission with respect to the incident linear polarization is found to be strongly anisotropic with the two-fold polarization dependence pattern. Furthermore, the effect of the SiP flake thickness on the THG power is analyzed.