A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

Elasser, Ahmed; Kheraluwala, M.H.; Ghezzo, M.; Steigerwald, R.L.; Krishnamurthy, N.; Kretchmer, J.; Chow, T. Paul

doi:10.1109/tia.2003.813730

Cited by 120 publications

(36 citation statements)

References 6 publications

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“…This makes them ideal as rectifiers in photovoltaic systems and high-efficiency power supplies [2]. SBDs also have important uses in optoelectronics, high frequency and bipolar integrated circuits applications [3,4].…”

Section: Introductionmentioning

confidence: 99%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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Irradiation experiments have been carried out on 1.9 × 10 16 cm -3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 10 10 to 9.2 × 10 11 cm -2 . Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,

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Section: Introductionmentioning

confidence: 99%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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“…This makes them ideal as rectifiers in photovoltaic systems, high-efficiency power supplies and high frequency oscillators [2]. SBDs also have important uses in optoelectronics, high frequency and bipolar integrated circuits applications [3,4].…”

Section: Introductionmentioning

confidence: 99%

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso

Meyer

Auret

et al. 2015

Materials Science in Semiconductor Processing

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The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H-SiC samples of doping density 7.1 × 10 15 cm -3 has been investigated over the temperature range 40-300 K. Currentvoltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6 × 10 14 electrons-cm -2 . For both devices, the I-V characteristics were well described by thermionic emission (TE) in the temperature range 120 -300 K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8 × 10 15 to 6.8 × 10 15 cm -3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 Acm −2 K −2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.

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“…Among the types of power semiconductors, power diode was the first device adopting SiC technology and being commercially available. The main advantages are high breakdown voltage and low reverse recovery current [4]- [6]. However, some low power applications, such as PV inverters, can not bring SiC diode's advantages into full play.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of full SiC switching cell in an interleaved boost converter for PV applications

Canales

Pettersson

et al. 2011

2011 IEEE Energy Conversion Congress and Exposition

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The paper presents device characteristics of a recent developed 1.2kV silicon carbide (SiC) switching cell and system performance of an interleaved boost converter using that switching cell. The static and dynamic characteristics of the full SiC switching cell, including a SiC MOSFET and a SiC diode, are experimentally extracted and the advantages of the devices are evaluated. A 2.5kW interleaved boost converter for PV applications is implemented as benchmark test system. It is used to evaluate the system efficiency improvement by using the full SiC switching cell. The experimental results show that the SiC MOSFET greatly improves the efficiency of the converter in contrast to Si 1.2kV IGBT devices.

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A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

Cited by 120 publications

References 6 publications

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Performance evaluation of full SiC switching cell in an interleaved boost converter for PV applications

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