Performance evaluation of full SiC switching cell in an interleaved boost converter for PV applications

Abstract

The paper presents device characteristics of a recent developed 1.2kV silicon carbide (SiC) switching cell and system performance of an interleaved boost converter using that switching cell. The static and dynamic characteristics of the full SiC switching cell, including a SiC MOSFET and a SiC diode, are experimentally extracted and the advantages of the devices are evaluated. A 2.5kW interleaved boost converter for PV applications is implemented as benchmark test system. It is used to evaluate the system efficiency improvement by using the full SiC switching cell. The experimental results show that the SiC MOSFET greatly improves the efficiency of the converter in contrast to Si 1.2kV IGBT devices.

Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices

“…For example, it has been reported that configures multiply the reactor current frequency against switching frequency by applying the magnetic-coupled reactor with the conventional Si as the switching device [2][3][4][5]. Regarding the configurations with SiC, it has been reported an insulated-type converter achieved 12 kW/L at 200 kHz drive [7]. In these reports, continuous operations at power density of approximately 5 kW/L to 17 kW/L have been verified.…”

SiC full-bridge grid-tied inverter with ZVS-switching

“…SiC MOSFET has shown advantages in the high switching frequency applications [2][3][4][5][6]. In literature [7], a SiC MOSFET single-phase NPC three-level inverter is investigated, showing that increasing the switching frequency by 4 times implies a reduction in efficiency of less than 1%.…”

An efficient current-source power bipolar junction transistor driver

“…SiC Barrier Schottky Diode was the first commercial power semiconductor device and currently can be obtained commercially by many semiconductor manufacturers since 2001 [3]- [7], and it is widely used in industry. SiC switching devices are expected to drive the power electronics industry to higher power density, higher frequency, higher efficiency, and superior performance comparing to Si devices with many applications such as power factor correction, motor drive, and photovoltaic inverters [8]- [14].…”

“…SiC MOSFETs were proven to be superior comparing to Si MOSFETs which have the same rating in low power applications [14]- [15]. Conventionally, Si IGBTs are chosen over other Si devices in high current and high power applications because of their better current-carrying capability.…”