A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Nemouchi, F.; Mangelinck, Dominique; Lábár, János L.; Putero, Magali; Bergman, C.; Gas, P.

doi:10.1016/j.mee.2006.09.014

Cited by 42 publications

(35 citation statements)

References 20 publications

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“…100, 022113 (2012) simultaneously, in particular Ni 5 Ge 3 and NiGe. 13,17,18 The first phase is a Ni rich phase of Ni 5 Ge 3 followed by a stoichiometric NiGe phase. Results have shown that NiGe is present after the electron-beam evaporation of Ni onto amorphous and polycrystalline Ge without annealing, 17 and the unannealed results in Fig.…”

Section: -2mentioning

confidence: 99%

“…Therefore, NiGe if formed during deposition and isothermal annealing leads to the simultaneous growth of Ni 5 Ge 3 and NiGe in the presence of Ni after a critical thickness of 10-20 nm is reached for Ni 5 Ge 3 . 17,18 To fully understand which phase is producing the lowest q c values, transmission electron microscopy (TEM) was undertaken on a sample annealed at 340 C using a FEI Tecnai T20 operated at 200 kV for imaging and diffraction and a FEI Tecnai TF20 operated at 200 kV with an energy dispersive analysis x-ray (EDAX) spectrometer for energy dispersive x-ray spectrometry (EDXS). Fig.…”

Section: -2mentioning

confidence: 99%

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Ohmic contacts to n-type germanium with low specific contact resistivity

Gallacher

Velha

Paul

et al. 2012

Applied Physics Letters

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A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 Â± 1.8) Ã\u97 10 -7 Î©-cm 2 for anneal temperatures of 340 Â°C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. Â© 2012 American Institute of Physics

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Section: -2mentioning

confidence: 99%

Section: -2mentioning

confidence: 99%

Ohmic contacts to n-type germanium with low specific contact resistivity

Gallacher

Velha

Paul

et al. 2012

Applied Physics Letters

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“…Usually in thin film reactions sequential growth of phases are observed. However, recently simultaneous growth of two nickel-germanides was suggested in the Ni-Ge system, 19 namely that of Ni 5 Ge 3 and NiGe until the total consumption of the Ni film. Simultaneous growth of phases was observed in other metal-Ge thin film systems also, and quite recently such cases have been indicated to occur in the Pt-Ge system as well.…”

Section: Discussionmentioning

confidence: 99%

A note on the reactions in the Ti-Ge system

Eliahu

Barkai²,

Lévi³

2012

AIP Advances

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Formations of germanides in thin films of the Ti-Ge system were investigated by XRD after furnace annealing for 1 hour. Ti6Ge5 seems to be the first phase formed while TiGe2 is the end phase with the lowest resistivity. The existence of the phase Ti5Ge3 was confirmed which forms at higher temperatures than Ti6Ge5. The presence of a thin TiO2 layer was observed by TEM. Which of the phase exists or is missed depends on composition of the constituents comprising the film, their thickness and temperature of reaction. Three phases are observed to coexist on the Ge substrate, which are Ti5Ge3, Ti6Ge5 and TiGe2. A schematic suggestion is presented for explaining the coexistence of two or more phases. The concept of formation and coexistence of two phases at lower temperatures is also proposed

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“…1 Introduction Thin film reactions of metal on semiconductor have been of interest for the past 30 years for their applications in microelectronic devices [1]. In the manufacturing of semiconductor devices, metal contacts have always played a pivotal role, especially in MOSFET and CMOS devices.…”

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confidence: 99%

“…The reactions of germanium with Pt [ 5 , 6 , 7 ], Ni [8,9,10,11,12], Pd [6,9,13,14,15] and Co [9,13,16,17] have also been investigated previously. Study of the solid state reaction between the metal films and germanium to determine the phase formation sequence [5,9,11,13,15,17], microstructure of material [9,10,12], growth kinetics [11,16] and electrical characteristics [9,10,12],were analyzed by x-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, differential calorimetry and current-voltage (I-V) techniques respectively.…”

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confidence: 99%

Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures

Chawanda

Nyamhere

Auret

et al. 2010

Phys. Status Solidi (c)

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SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film had the main Si‐O‐C bond with the molecule vibration mode in the range of 930∼1230 cm‐1 which consists of C‐O and Si‐O bonds related to the cross link formation according to the dissociation and recombination. The C‐O bond originated from the elongation effect by the neighboring highly electronegative oxygen atoms at terminal C‐H bond in Si‐CH3 of 1270 cm‐1. However, the Si‐O bond was formed from the second ionic sites recombined after the dissociation of Si‐CH3 of 1270 cm‐1. Increment of Si‐O bond in the Si‐O‐C main bond contributed to increase the hardness and decrease the roughness because of the decreasing of the carbon content witch is related to the space effect. The dielectric constant of SiOC film was decreased by lowering the polarization which consists of the ionic and electronic polarity. Increment of Si‐O bond in a right shoulder at the main bond was interpreted by the red shift observed in FTIR spectra. Moreover, the increment of Si‐O bond and decrement of carbon content induced to decrease the ionic polarity and then decreased the dielectric constant (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Cited by 42 publications

References 20 publications

Ohmic contacts to n-type germanium with low specific contact resistivity

Ohmic contacts to n-type germanium with low specific contact resistivity

A note on the reactions in the Ti-Ge system

Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures

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