A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy /Low-Energy Electron Diffraction/Scanning Tunneling Microscopy

Abstract

From a comparative study using scanning tunneling microscopy, high-resolution lowenergy electron diffraction, and reflectance difference spectroscopy, we investigate the optical anisotropy on clean and H-covered Si(001) surfaces. We demonstrate a high sensitivity of reflectance difference spectroscopy to the surface tructural anisotropy and surface chemistry.

Linear Optical Properties of Si Surfaces and Nanostructures

“…Between 1.5 and 3 eV all RDS spectra for clean vicinal Si(001), with the exception of the (113) surface, show a strong increase toward lower energies [11]. We expect measured and calculated spectra to be different in the 1.5 to 3 eV spectral range because of either step [17] or dangling bond contributions [11] (in agreement to [18]). A discussion of this issue is beyond the scope of this paper.…”