It is demonstrated, using reflectance difference spectroscopy, scanning tunneling microscopy, and low-energy electron diffraction, combined with deliberate straining of the surface, that the presence of atomic steps dramatically changes the optical anisotropy of the Si(001) surface. The step-induced reflectance difference signal originates predominately from rebonded steps and is comparable in magnitude to that of the terrace signal. [S0031-9007(98)08282-9]

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From a comparative study using scanning tunneling microscopy, high-resolution lowenergy electron diffraction, and reflectance difference spectroscopy, we investigate the optical anisotropy on clean and H-covered Si(001) surfaces. We demonstrate a high sensitivity of reflectance difference spectroscopy to the surface tructural anisotropy and surface chemistry.