A comparison of a theoretical model and sensitivity factor calculations for quantification of sims data

Smith, David H.; Christie, W. H.

doi:10.1016/0020-7381(78)80005-9

Cited by 34 publications

(14 citation statements)

References 10 publications

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“…Error factors have previously been used to compare RSF quantification of glass (2,5,6) and metallurgical (6, 7) matrices. Error factors are defined as the determined concentration divided by the true concentration.…”

Section: Resultsmentioning

confidence: 99%

Relative sensitivity factors of elements in quantitative secondary ion mass spectrometric analysis of biological reference materials

Ramseyer¹,

Morrison²

1983

Anal. Chem.

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Section: Resultsmentioning

confidence: 99%

Relative sensitivity factors of elements in quantitative secondary ion mass spectrometric analysis of biological reference materials

Ramseyer¹,

Morrison²

1983

Anal. Chem.

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“…It is not'within the scope of this paper to deal with this question and the reader is referred to the literature re- viewing the quantification of AES and XPS (86,109,110), SIMS (49,111,112), and ISS (113). The considerations, discussions, and examples in the rest of this paper are almost exclusively based on these four methods.…”

Section: Principles Of Sputter Depth Profiling Fundamental Conceptsmentioning

confidence: 99%

Sputter Depth Profiling of Microelectronic Structures

Zinner

1983

J. Electrochem. Soc.

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Reviewed are the principles and applications of sputter depth profiling for the analysis of semiconductor and microelectronic materials. Various techniques are based on sputter removal whereby either the sputtered species (in SIMS, SCANIIR) or the remaining surface (AES, XPS, ISS) are investigated. In spite of its increasing importance, there are many problems associated with sputter etching. After a general survey of the principles, a detailed discussion is devoted to the many effects which can distort sputter depth profiles and limit depth resolution. These effects can be caused by instrumental factors (nonuniformity of erosion, beam impurities, vacuum contaminants) and the sample composition or can be due to the analysis method used (information depth, matrix effects, detection limit, sample consumption). Most important are the effects caused by the sputtering ion beam itself. Among these are notably preferential sputtering, atomic mixing, surface roughness as a result of the sputter process, sample charging, surface transport, and chemical reduction. The review of applications concentrates on the measurement of the distribution of dopants and impurities in semiconductors, on the study of insulating films (in particular the Si/SiO~ interface and the oxidation of GaAs), and on the metallization problem in Si and GaAs technology.The ever-increasing miniaturization of electronic devices in VLSIC technology (1) places new demands on analytical techniques for their characterization (2, 3). Of special interest is the measurement of elemental distributions, in particular the measurement of dopant distributions in the semiconductor substrate (4, 5) and the analysis of diffusive and reactive processes between metal, semiconductor, and dielectric films (6, 7) which are the basic elements of microelectronic structures. The analytical requirements for measurement techniques include good spatial resolution as well as elemental sensitivity and specificity. Although there are interesting questions to be asked with respect to lateral dimensions, because of the planar structure of most microelectronic devices, methods for the measurement of elemental concentrations as a function of depth are of special importance. An example for the requirements for the depth resolution of such methods is given in Fig. 1 which shows calculated depth distributions of dopants in base and camel collector of a monolithic hot electron transistor (MHET) with an extremely shallow barrier raising implant.An overview of methods for the measurement of depth profiles is given in Table I. The so-called nondestructive techniques are so named n~t because they necessarily leave the sample undamaged, but because the sample surface does not have to be removed in order to obtain information about the inside. The sample interior is rather probed with penetrating ion or electron beams whereby the depth information is obtained via the energy loss experienced by the particles while traversing the sample. Rutherford backscattering spectroscopy (RBS) is based on the ...

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“…In each case, silicon was utilized as the known reference element. The errors are given in terms of the error factor F where F equals the ratio of the calculated concentration to the actual concentration (5). Underestimates are presented as negative reciprocals for easy comparison.…”

Section: Experimental Instrumentationmentioning

confidence: 99%

“…Instrumental Discrimination. The above results have been given in terms of atomic percent concentration in order to facilitate comparison of these results with those of Christie and Smith (5). This comparison is presented in " Measured relative to the silicon signal.…”

Section: Experimental Instrumentationmentioning

confidence: 99%

See 1 more Smart Citation

Quantitative ion probe analysis of glasses by empirical calibration methods

Ganjei¹,

Morrison²

1978

Anal. Chem.

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technique for quantitative analysis for trace amounts of arsenic. Comparison of detection limits (Table III) demonstrates that the ESCA-volatilization technique is quite competitive with other trace analytical methods. Likewise, our analytical method shows both good accuracy and precision.Further, volatilization can be performed in the field making remote sampling facile. The possibility of doing quantitative simultaneous multielement analysis at trace levels also has been demonstrated. ACKNOWLEDGMENTThe authors express their gratitude to F. W. Plankey and E. M. Heithmar for loan of the atomic absorption standards and for some helpful discussions; also to S. Erickson for her assistance. LITERATURE CITED(1) T. A. Carlson, "Photoelectron and Auger Spectroscopy", Plenum Press.

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A comparison of a theoretical model and sensitivity factor calculations for quantification of sims data

Cited by 34 publications

References 10 publications

Relative sensitivity factors of elements in quantitative secondary ion mass spectrometric analysis of biological reference materials

Relative sensitivity factors of elements in quantitative secondary ion mass spectrometric analysis of biological reference materials

Sputter Depth Profiling of Microelectronic Structures

Quantitative ion probe analysis of glasses by empirical calibration methods

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