A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

Stutzmann, M.; Chevrier, J.; Herrero, Carlos P.; Breitschwerdt, A.

doi:10.1007/bf00323434

Cited by 28 publications

(8 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It appears in these solids in a number of different configurations: as an isolated interstitial, bound to impurities, bound to native defects, in molecular form, etc. 1,2,3 In the early 1980s, isolated hydrogen molecules were predicted to be stable in crystalline semiconductors and to play an important role in the diffusion of hydrogen in these materials. 4,5 However, they were not unambiguously detected by spectroscopic methods until more than ten years later.…”

Section: Introductionmentioning

confidence: 99%

Molecular hydrogen in silicon: A path-integral simulation

Herrero

Ramı́rez

2009

Phys. Rev. B

View full text Add to dashboard Cite

Molecular hydrogen in silicon has been studied by path-integral molecular-dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic interactions were modeled by a tight-binding potential fitted to density-functional calculations. The most stable position for these impurities is found at the interstitial T site with the hydrogen molecule rotating freely in the Si cage. Vibrational frequencies have been obtained from a linear-response approach, based on correlations of atom displacements at finite temperatures. The results show a large anharmonic effect in the stretching vibration, s , which is softened with respect to a harmonic approximation by about 300 cm −1 . The coupling between rotation and vibration causes an important decrease in s for rising temperature.

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular hydrogen in silicon: A path-integral simulation

Herrero

Ramı́rez

2009

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Hydrogenation or deuteration for up to 168 h was performed using a remote dc plasma operating at a pressure of 0.3 mbar. As corresponding experiments on Zn-doped GaAs have shown that the passivation of Zn works best at a temperature of 170°C, 15 this temperature was also used for the experiments on GaMnAs as reported here. The time required for a complete passivation of GaMnAs can be attributed to the low extraction voltage from the plasma of Ϫ200 V used and the trap limited diffusion of hydrogen.…”

mentioning

confidence: 97%

“…In Zn-doped GaAs, corresponding peaks have also been observed and were attributed to D at the surface and to D complexed to acceptors, respectively. 15 Therefore, the deuterium-acceptor complexes in GaAs dissociate only at temperatures well above the growth temperature of GaMnAs, so that the deuteration of GaMnAs epilayers can be regarded as stable and nonvolatile for annealing temperatures up to their growth temperature. No reactivation of the acceptors was observed after effusion experiments up to the growth temperature.…”

mentioning

confidence: 99%

Passivation of Mn acceptors in GaMnAs

Brandt

Goennenwein

Wassner

et al. 2004

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

The effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (≈1021 cm−3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform infrared absorption measurements show the As–H and As–D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs.

show abstract

“…26 Apart from that, the probing depth of our laser is only 9 nm, which is a factor of about 45 less than that for Si for the same wavelength. 22 Altogether, this increased the required integration time to 30 h and makes further experimental investigation of the H 2 properties in Ge, for instance thermal stability, an extremely hard task.…”

mentioning

confidence: 97%

InterstitialH2in germanium by Raman scattering andab initiocalculations

et al. 2005

View full text Add to dashboard Cite

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm −1 with an intensity ratio of 3:1, which are assigned to ortho-and para-H 2 trapped at the interstitial T site of the lattice.

show abstract

A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

Cited by 28 publications

References 19 publications

Molecular hydrogen in silicon: A path-integral simulation

Molecular hydrogen in silicon: A path-integral simulation

Passivation of Mn acceptors in GaMnAs

InterstitialH2in germanium by Raman scattering andab initiocalculations

Contact Info

Product

Resources

About