A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

Gnoth, D.; Wolfframm, D.; Patchett, A.; Hohenecker, St.; Zahn, Dietrich R. T.; Leslie, A.; McGovern, I.T.; Evans, D. A.

doi:10.1016/s0169-4332(97)00424-8

Cited by 33 publications

(12 citation statements)

References 18 publications

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“…b, which is increased after annealing we conclude that a gallium sulfide (GaS) phase was formed upon heating . Also the occurrence of the S 2p component (I) in the same figure supports this finding since it is assigned to a S‐Ga bond . In addition, the total intensity of the As 3d peak remains more or less unchanged with an increased bulk component (II), which is related to a Ga–As bond and a decreased surface component (I), which is related to an As–S bond.…”

Section: Discussionsupporting

confidence: 71%

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Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Calvet

Lewerenz

Pettenkofer

2014

Phys. Status Solidi A

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The heterojunction formation between GaAs(100) and CuInS 2 is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). Thin layers of CuInS 2 films were deposited in a step-by-step process on wet chemically pretreated GaAs(100) surfaces by molecular beam epitaxy (MBE) with a total upper thickness limit of the films of 60 nm. The film growth starts from a sulfur-rich GaAs(100) surface. XPS core level analysis of the substrate and film reveals initially a transitory growth regime with the formation of a Ga containing chalcopyrite phase. With increasing film thickness, a change in stoichiometry from Cu-poor to Cu-rich composition is observed. The evaluation of the LEED data shows the occurrence of a recrystallization process where the film orientation follows that of the substrate with the epitaxial relation GaAs{100}||CuInS 2 {001}. On the completed junction with a CuInS 2 film thickness of 60 nm, the band discontinuities of the GaAs(100)/CuInS 2 structure measured with XPS and UPS were determined as DE V ¼ 0.1 AE 0.1 eV and DE C ¼ 0.0 AE 0.1 eV, thus showing a type II band alignment.

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Section: Discussionsupporting

confidence: 71%

“…In the Ga 3s/S 2p region, two S 2p doublets (spin–orbit splitting of 1.1 eV and intensity ratio of 0.5) are fitted together with a single Ga 3s profile according to Ref. . After annealing, both, the S 2p (I) and the Ga 3s (II) emissions are rising whereas the S 2p (III) emission is attenuated.…”

Section: Resultsmentioning

confidence: 99%

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Calvet

Lewerenz

Pettenkofer

2014

Phys. Status Solidi A

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“…20 Ohmic back contacts were prepared on the reverse of all samples prior to insertion into the OMBD/analysis environment. Following in situ annealing to 450 C to remove excess sulfur, ordered and oxygenfree surfaces were confirmed by photoelectron spectroscopy and the observation of characteristic 2 Â 1 Low Energy Electron Diffraction (LEED) patterns.…”

Section: Methodsmentioning

confidence: 99%

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

Evans¹,

Vearey-Roberts²,

Roberts³

et al. 2013

Journal of Applied Physics

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Evans, D. A., Vearey-Roberts, A. R., Roberts, O. R., Williams, G. T., Cooil, S. P., Langstaff, D. P., Cabailh, G., McGovern, I. T., Goss, J. P. (2013). Transport and optical gaps and energy band alignment at organic-inorganic interfaces. Journal of Applied Physics, 114 (12), [123701]The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.publishersversionPeer reviewe

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“…It was reported that the (NH 4 ) 2 S solution can almost remove but not completely the native oxides on InP [7][8][9] and cover the surface with sulfur atoms to prevent further oxidization [10]. In this work, we characterize the Al/InP Schottky contact by (NH 4 ) 2 S treatment and the corresponding Al/InP Schottky barrier MOSFETs (SB-MOSFETs) with TiO 2 /Al 2 O 3 as gate oxides.…”

mentioning

confidence: 99%

InP Schottky Barrier MOSFET with TiO2/Al2O3 as Gate Oxide

Lee

Yen

2014

2014 International Symposium on Computer, Consumer and Control

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The characteristics of Al/InP Schottky diode without and with (NH 4 ) 2 S treatment (Al/S-InP) and corresponding MOSFET with atomic layer deposited TiO 2 /Al 2 O 3 stacked gate oxides were investigated. The Schottky barrier height (I Bp ) of Al/InP with (NH 4 ) 2 S treatment is improved from the removal of native oxides. For Al/S-InP Schottky barrier MOSFET with TiO 2 /Al 2 O 3 gate oxides, good drain currentvoltage and sub-threshold characteristics were obtained. The channel mobility and transconductance can reach 202 mm 2 /Vs and 4.45 × 10 -7 S/μm at V DS = 1 V. Keywords-Schottky barrier, ALD, Al 2 O 3 , TiO 2 , InP, MOSFET I. INTRODUCTION ecently, III-V compound semiconductor MOSFETs have attracted strong attention as the scaling of Si CMOS technology beyond the 22 nm node for their higher electron mobility than Si-based counterparts [1]. For high performance III-V channel MOSFETs, the source/drain (S/D) region with a low resistance is remained as one challenge because of the limited dopant solubility and activation rate [2]. The metal Schottky S/D structure is a promising solution due to the low resistance and low temperature process.The gate dielectric with low interface state density (D it ), and good thermal stability is also essential for high performance MOSFET. Many high-k dielectrics are currently being explored on InP. TiO 2 has a relatively high dielectric constant (k value 35-100 depending on the growth method) and high transconductance MOSFET with TiO 2 gate oxide is expected. However, the high thermionic emission of low band-gap TiO 2 (3.5 eV) needs a high band-gap, for example Al 2 O 3 (9 eV) stacked on it. Films with precise thickness can be prepared by atomic layer deposition (ALD), in which selflimiting precursors are sequentially deposited [3]. ALD offers higher quality thin film on atomic scale over conventional MOCVD (metal-organic chemical vapor deposition). In addition, ALD-Al 2 O 3 on III-V compound can improve the interface quality by the self-cleaning reaction on native oxides [4], which is the main contribution to high interface state density (D it ) [5]. High D it will cause the Fermi-level pinning at the interfaces of Schottky S/D and gate oxide on III-V

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A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

Cited by 33 publications

References 18 publications

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

InP Schottky Barrier MOSFET with TiO2/Al2O3 as Gate Oxide

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A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

Cited by 33 publications

References 18 publications

Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates

Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

InP Schottky Barrier MOSFET with TiO2/Al2O3 as Gate Oxide

Contact Info

Product

Resources

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Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates