A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere

Derenge, Michael A.; Jones, Kenneth A.; Kirchner, K. W.; Ervin, Matthew H.; Zheleva, T. S.; Hullavarad, Shiva S.; Vispute, R. D.

doi:10.1016/j.sse.2004.05.079

Cited by 12 publications

(8 citation statements)

References 9 publications

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“…[31] An AIN cap fabricated by pulsed laser deposition was used to protect the SiC surface during high temperature annealing. [32,33] Nitrogen dopants are assumed to occupy C lattice sites in SiC and coimplantation with Si ions is used to increase the electrical activation according the site-competition effect theory. Seshadri received 6.3 percent activation by 1300 • C annealing and nearly complete activation by annealing at temperatures above 1500 • C for nitrogen ion-implantation.…”

Section: Resultsmentioning

confidence: 99%

Ohmic contacts of 4H-SiC on ion-implantation layers

Wang

Zhang

et al. 2010

Chinese Phys. B

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The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance R sh are 30 kΩ/ and 4.9 kΩ/ and the values of specific contact resistance ρc of ohmic contacts are 7.1 × 10 −4 Ω • cm 2 and 9.5 × 10 −5 Ω • cm 2 for the implanted layers with implantation performed three and four times respectively.

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Section: Resultsmentioning

confidence: 99%

Ohmic contacts of 4H-SiC on ion-implantation layers

Wang

Zhang

et al. 2010

Chinese Phys. B

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“…Assuming, like Baliga The vertical substrate resistance, R SUB , is simply the bulk resistance of a material doped to a concentration of, n sub , it is the same for the three types of resistors, and the length is the width of the cell, W c . R SUB = d sub /qn sub µ sub [12] The vertical drain contact resistance, R DC , is also the same for the three types, and it covers the entire area of the cell as well. The internal resistance of one side of the cell, R 1/2 , is then…”

Section: N Gamentioning

confidence: 99%

“…However, they cannot be so closely controlled when they are created by ion implantation and also by the annealing process used to anneal them out (11). The annealing process can create more vacancies by the preferential evaporation of the anion in binary semiconductors such as Si in SiC (12) and N in GaN (13). Sometimes the point defects generated during the implant coalesce during the anneal into 1-or 2-dimensional defects that are electrically active.…”

Section: Crystalline Defectsmentioning

confidence: 99%

(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga₂O₃Must Master to Compete with SiC and GaN HPE Devices

et al. 2017

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Power diodes and transistors fabricated from the ultra-wide bandgap (UWBG) semiconductors, AlGaN, Ga 2 O 3 , and diamond are compared with those fabricated from GaN and SiC using currently available values. Parameters used in the operation of the devices are discussed, methods for improving them are described, and the ability to, and importance of, improving them are assessed. Equations for the resistance of different elements of the device are also provided so one can assess their importance and make meaningful comparisons between the different types of transistors.

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“…Therefore, in figure 1a the decreasing of the sheet resistances either with the temperature and the duration of the annealing is fundamentally caused by the increase of the dopants activation. Si sublimation has been reported to be prevented by capping the surface with AlN [7], graphite (C) [8] or by using silane partial overpressure during annealing [9]. In this later case an accurate control of the gas flux is necessary to prevent Si droplet deposition.…”

Section: Al Ion Implantationmentioning

confidence: 99%

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Lazar¹,

Carole²,

Raynaud³

et al. 2015

2015 International Semiconductor Conference (CAS)

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P-type 4H-SiC layers formed by ion implantation need high temperature process generating surface roughness, losing and incomplete activation of dopants. Due to dopant redistribution and channeling effect, it is difficult to predict the depth of the formed junctions. Vapor-Liquid-Solid (VLS) selective epitaxy is an alternative method to obtain locally highly doped p-type layers in the 10 20 cm-3 range or more. The depth of this ptype layers or regions is accurately controlled by the initial Reactive-Ion-Etching (RIE) of the SiC. Lateral Junction Field Effect Transistor (JFET) devices are fabricated integrating p-type layers created by Al ion implantation or VLS growth. The P-type VLS layers improve the access resistances on the electrodes of the fabricated devices.

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A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere

Cited by 12 publications

References 9 publications

Ohmic contacts of 4H-SiC on ion-implantation layers

Ohmic contacts of 4H-SiC on ion-implantation layers

(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga₂O₃Must Master to Compete with SiC and GaN HPE Devices

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

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A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere

Cited by 12 publications

References 9 publications

Ohmic contacts of 4H-SiC on ion-implantation layers

Ohmic contacts of 4H-SiC on ion-implantation layers

(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga2O3Must Master to Compete with SiC and GaN HPE Devices

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Contact Info

Product

Resources

About

(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga₂O₃Must Master to Compete with SiC and GaN HPE Devices