A comparison of the DC conduction properties in evaporated cadmium selenide thin films using gold and aluminium electrodes

Oduor, Andrew O.; Gould, R.D.

doi:10.1016/s0040-6090(97)00575-0

Cited by 32 publications

(25 citation statements)

References 12 publications

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“…For traps of a discrete single localised energy level n = 2 [19,20] and for an exponential distribution of trap levels n > 2 [21]. Data of the present investigation follow the TCLC-SCLC mechanism with n > 2 for which the following relation is satisfied [22,23]:…”

Section: Theoretical Backgroundsupporting

confidence: 55%

DC conduction properties of oxidised erbium films deposited on Si(100) substrates

Dakhel

2005

Journal of Alloys and Compounds

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Section: Theoretical Backgroundsupporting

confidence: 55%

DC conduction properties of oxidised erbium films deposited on Si(100) substrates

Dakhel

2005

Journal of Alloys and Compounds

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“…The distribution of grain size and other structural and morphological properties of the films strongly affect the performance and reliability of active devices fabricated on such layers. In recent years the investigation of electrical and optical properties of CdSe thin films have been given much importance in order to improve the performances of the devices and also for finding new applica- * corresponding author; e-mail: suthanjk@gmail.com tions [8][9][10][11]. A number of methods have been used to prepare CdSe thin films (including physical vapour deposition, sputtering, spray pyrolysis, electrodeposition, etc.)…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate Temperature on the Structural and Optical Properties of Nanocrystalline Cadmium Selenide Thin Films Prepared by Electron Beam Evaporation Technique

Kissinger¹,

Suthagar

Kumar

et al. 2010

Acta Phys. Pol. A

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Cadmium selenide (CdSe) thin films on glass substrates were prepared by physical vapour deposition under vacuum using the electron beam evaporated technique for different substrate temperatures: room temperature, 100, 200, 300• C, respectively. X-ray diffraction analysis indicates that the films are polycrystalline, having hexagonal (wurtzite) structure irrespective of their substrate temperature. All the films show most preferred orientation along (0 0 2) plane parallel to the substrates. The microstructural parameters such as particle size, stress, strain and dislocation density were calculated. The grain size of deposited CdSe films is small and is within the range of 18 to 42 nm. The optical absorption spectra of electrom beam deposited CdSe films were studied in the wavelength region of 250-2500 nm. The energy gap (Eg) values (allowed direct transitions), calculated from the absorption spectra, ranged between 1.77 and 1.92 eV. The surface morphological quality of electron beam evaporated CdSe films were analyzed by scanning electron microscopy and atomic force microscopy.

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“…The most suitable mechanism that can explain the present experimental results is the trap-charge-limited space-charge-limited (TSCL) conductivity mechanism. According to TSCL mechanism, the current density J is proportional to applied voltage V ins as ~n ins J V , where the exponent n is determined by the trap distribution so that n=2 for traps of a discrete single localised level [20,21] and n > 2 for the exponential distribution of trap levels [22]. Data of the present investigation follow the TSCL mechanism with n > 2 for which the following relation is satisfied [23.24]:…”

Section: Resultsmentioning

confidence: 71%

DC conduction in bis(dimethylglyoximato)palladium(II) thin films

Dakhel

2007

Cryst. Res. Technol.

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Bis(dimethylglyoximato)palladium (II) complex thin films of polycrystalline structure were prepared by sublimation in a vacuum at 140°C on p-Si substrates. After carrying out the characterisation of the prepared films by X-ray diffraction and X-ray fluorescence methods, Al-complex-Si MIS devices were fabricated. The constructed MIS structure was characterised by measuring the capacitance as a function of gate voltage at 1 MHz. The dependence of dc-current density on gate voltage and temperature in the range of 293 -328 K of the MIS device was measured. It was found that the experimental data follow the trap-charge-limited spacecharge-limited conductivity mechanism, from which the total concentration and the exponential energy distribution of the trap density were determined. In general, the measured quantities suggest that the conduction can be realised by thermally assisted hopping between localised states bundled in a very narrow band lying energetically near the mobility band edge. Moreover, results show that it is possible to use a film of the complex in applications of low-k dielectric material.

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A comparison of the DC conduction properties in evaporated cadmium selenide thin films using gold and aluminium electrodes

Cited by 32 publications

References 12 publications

DC conduction properties of oxidised erbium films deposited on Si(100) substrates

DC conduction properties of oxidised erbium films deposited on Si(100) substrates

Effect of Substrate Temperature on the Structural and Optical Properties of Nanocrystalline Cadmium Selenide Thin Films Prepared by Electron Beam Evaporation Technique

DC conduction in bis(dimethylglyoximato)palladium(II) thin films

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