A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots

“…However, we cannot quantify the In-rich WL thickness. CCl 4 etching was also reported to be less effective in InGaAs with larger Ga contents [19]. The decreased etching rate may cause the decreased amount of the blue shift of the PL peak associated with the WL for higher CBrCl 3 flow rates.…”

Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3

“…It has been reported that the efficiency of C doping into InGaAs as a p-type carrier decreases as the In composition increases [6,7]. In order to examine the effects of the In composition on the C doping while maintaining the lattice mismatch within |Da|p5 Â 10 À3 , InGaAs:C was grown at 550 1C with a V/III ratio of 5 and the fixed CBrCl 3 molecular concentration of 1.6 Â 10 À5 mol/min.…”

“…C has also been used as the p-type dopant in InGaAs base layers, although it is very difficult to establish a high concentration and a low-resistivity p-type conduction in the InGaAs regardless of the C precursors, such as CBr 4 and CCl 4 [2,3]. This difficulty is attributed to the low doping efficiency [3,4], the amphoteric behavior of C that becomes significant when the In concentration increases [5] and the free carrier reduction due to hydrogen passivation of the C acceptors [3,[6][7][8]. There seems to be no striking differences in superiority between CBr 4 and CCl 4 as a C precursor for InGaAs.…”

Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

“…Additionally, heavily doped p-GaAsSb can be achieved by carbon doping. Although carbon is a useful dopant material for forming an abrupt doping profile because of its low diffusivity and lack of memory effect [4], carbon acceptors are easily passivated by hydrogen atoms during MOCVD growth, especially in carbon-doped InGaAs [5][6][7]. This hydrogen passivation degrades device performance.…”