A complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale

Abstract

Analytical modeling with a verified simulation setup of surface potential, threshold voltage and electric field for a 4H-SiC MOSFET is presented to make enquiries about the short channel effects. The two-dimensional (2D) Poisson equation is used to achieve the model for surface potential. The 2D position equations have been solved by using four boundary conditions. The detail of the model is appraised by the various MOSFET parameters such as silicon carbide thickness, body doping concentration, and gate oxide influencing the electric field, channel potential and threshold voltage. The outcome shows that this model can reduce the short channel effects, drain induced barrier lowering and advance the sub-threshold fulfillment in nanoelectronic applications as compared to silicon MOSFETs. By comparing the model results with the 2D device simulations the veracity of the suggested 2D analytical model is proven.