A completely self‐aligned TFT‐array process using five masks

Abstract

Abstract— In this paper we present a five‐mask process to make completely self‐aligned inverted‐staggered amorphous‐silicon TFTs. The mask‐count reduction from a conventional seven‐mask process was accomplished by simultaneous patterning of pixel electrodes and signal lines and by the use of back‐side laser annealing. A mobility value close to 1 cm2/V‐s was obtained for TFTs fabricated using this process.