Hayzelden et al., "In Situ Transmission Electron Micros copy Studies of Silicide-Mediated Crystallization of Amor phous Silicon'(3 pages).

6‐bit gamma compensated digital data driver using LTPS TFTs was integrated in AMOLED panel. We have applied conventional register ladder D/A converter circuits with 9 points reference voltage for each color. We have obtained both good gray scale and good white balance by optimizing the reference voltage. DC/DC converter and serial to parallel converter have also been integrated by TFT. The number of pixels is 768 × 228 dots. The width of the data driver designed by 2micron rule is only 2.6mm.

The use of a double-layer, plasma-enhanced chemical vapor deposited SiO2/SiN x film as a gate dielectric material for polysilicon thin-film transistors was investigated in order to reduce mobile ion contamination and to improve gate oxide integrity degradation. We observed that the interposed silicon nitride film between the gate electrode and the SiO2 gate insulator prevents the incorporation of mobile ions into the SiO2 film, and also increases the breakdown voltage of the gate-insulating film. The mobile ion densities for the double SiO2/SiN x and single SiO2 gate dielectrics (no interposed SiN x layer between the gate electrode and SiO2 gate insulator) were 1.3 ×1011 and 1.7 ×1012/cm2, respectively. The breakdown fields at the 50% failure points in the Weibull plots for the double and single dielectric cases were 8 and 5 MV/cm, respectively. We conclude that the silicon nitride layer of the double gate insulator film minimizes ion contamination, leading to the enhancement of breakdown characteristics.

No abstract

Active‐matrix organic light emitting diodes (AMOLEDs) has been widely adopted in small‐, medium‐ and large‐sized displays for applications such as smartphones, automotive dashboards, smart wearables, VR/AR, etc. From the point of view of mass production, AMOLEDs still suffer from the challenges of the TFT backplane technology, due to stringent and sometimes conflicting property requirements for TFTs. Based on a review of the technological trends for AMOLED displays, we will herein systematically analyze the challenges for TFT properties, in terms of their relationships with product performance issues, such as lifetime, mura, and image sticking. It was found that minimizing the Ids‐Vds slope in the saturation region contributes to improvement in lifetime of AMOLEDs. Incorporating an oxidative plasma treatment before gate‐insulator (GI) deposition, a GI annealing process, and a use of a double‐layer (SiO2/SiN) GI are helpful to reduce the trap density in oxide layer and at the poly‐Si/GI interface, and help improve short‐time image‐sticking.