Low temperature selective crystallization of amorphous silicon

Kakkad, R.; Liu, G.; Fonash, Stephen J.

doi:10.1016/0022-3093(89)90362-1

Cited by 12 publications

(5 citation statements)

References 4 publications

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“…This had an advantage of not having collateral damage to the glass substrate which are infra-red radiation transparent. This process also had been reported to have high initial set-up cost [13].…”

Section: Introductionmentioning

confidence: 98%

Fabrication of a solar cell from silicon doped with aluminium

Kotsedi

Knoesen

Madjoe

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 98%

Fabrication of a solar cell from silicon doped with aluminium

Kotsedi

Knoesen

Madjoe

et al. 2015

Journal of Alloys and Compounds

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“…Thin-film polycrystalline Si (poly-Si) solar cells, expected to be one of the future low-cost solar cells, require only a few μm of Si material. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The current world record power conversion efficiency of the thin-film poly-Si solar cell on a glass substrate with a back-contact structure exceeds 15%. 13) We have thus far demonstrated the formation of intrinsic poly-Si (i-poly-Si) films by crystallizing precursor hydrogenated intrinsic amorphous Si (i-a-Si:H) films by flash lamp annealing (FLA) on glass substrates with chromium (Cr) adhesion layers.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Wang

Ohdaira

2022

Jpn. J. Appl. Phys.

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Flash lamp annealing (FLA) is a short-duration annealing technique that can crystallize amorphous silicon (a-Si) films for thin-film polycrystalline Si (poly-Si) solar cells. We investigated the crystallization of n-type hydrogenated a-Si (n-a-Si:H) films formed by catalytic chemical vapor deposition on Si nitride- (SiN x -) coated textured glass substrates. The n-a-Si:H films with a thickness of ∼2.7 μm were crystallized by FLA with no film peeling even without chromium adhesion layers. We also confirmed that the crystallization takes place through explosive crystallization (EC). The addition of phosphorous to the precursor a-Si:H slightly modifies the crystallization, resulting in different grain sizes and EC velocities compared to the case of EC of intrinsic a-Si:H.

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“…One of the key points of this technology is the local enhancement of the nucleation rate during the solid-phase crystallization (SPC) of amorphous silicon films, using the Ni-MILC method [3,4]. This technology must also be combined with the ELA method in order to reduce crystalline defects appearing in SPC films [5] and to achieve SG-Si TFTs.…”

Section: Introductionmentioning

confidence: 99%

Structural Improvement of Nickel Metal-Induced-Lateral-Crystallized Silicon Films Using Excimer Laser Annealing

Miyasaka

Makihira

Asano

et al. 2001

31st European Solid-State Device Research Conference

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Crystalline properties of nickel metalinduced-lateral-crystallized(Ni-MILC) silicon films are examined in detail. Laterally grown crystalline grains can be as large as 19 µm, though the grains consist of small misorientated sub-grains. The excimer laser annealing (ELA) method definitely improves Ni-MILC film quality. As a result, fairly good polysilicon thin film transistors are easily fabricated through a low-temperature process. It is, however, difficult to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.

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Low temperature selective crystallization of amorphous silicon

Cited by 12 publications

References 4 publications

Fabrication of a solar cell from silicon doped with aluminium

Fabrication of a solar cell from silicon doped with aluminium

Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Structural Improvement of Nickel Metal-Induced-Lateral-Crystallized Silicon Films Using Excimer Laser Annealing

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