2022
DOI: 10.1049/pel2.12367
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A comprehensive analytical description of the asymmetric active snubber

Abstract: Power modules for several hundred amperes suffer from a high stray inductance compared to discrete setups at similar current density. The use of silicon carbide in such modules is beneficial but due to the high stray inductance, the switching speed must be reduced to keep the voltage overshoot below breakdown voltage. As a result, the semiconductor material cannot be fully utilised. To improve the utilisation in terms of power output, by strong over‐voltage reduction, reduced ringing, and highest switching spe… Show more

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