A comprehensive four parameters I–V model for GaAs MESFET output characteristics

Memon, Noor Muhammad; Ahmed, M. M.; Rehman, Fazal ur

doi:10.1016/j.sse.2006.12.011

Cited by 37 publications

(11 citation statements)

References 12 publications

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“…and carefully checked their accuracy. A typical comparison of the TriQuint TOM2 and Dobes (called Dobes in [17,18]) models [17][18][19][20]25] is shown in Fig. 3.…”

Section: Approximating the Scattering Parametersmentioning

confidence: 99%

See 1 more Smart Citation

Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers

Dobeš¹,

Michal²,

Popp³

et al. 2015

RADIOENGINEERING

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Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end can be strongly optimized to attain a suitable tradeoff between the noise figure and transducer power gain. Further, as all the four principal navigation systems (GPS, GLONASS, Galileo, and COMPASS) work in similar frequency bands (roughly from 1.1 to 1.7 GHz), it is reasonable to create the low noise preamplifier for all of them. In the paper, a sophisticated method of the amplifier design is suggested based on multiobjective optimization. A substantial improvement of a standard optimization method is also outlined to satisfy a uniform coverage of Pareto front. Moreover, for enhancing efficiency of many times repeated solutions of large linear systems during the optimization, a new modification of the Markowitz criterion is suggested compatible with fast modes of the LU factorization. Extraordinary attention was also given to the accuracy of modeling. First, an extraction of pHEMT model parameters was performed including its noise part, and several models were compared. The extraction was carried out by an original identification procedure based on a combination of metaheuristic and direct methods. Second, the equations of the passive elements (including transmission lines and T-splitters) were carefully defined using frequency dispersion of their parameters as Q, ESR, etc. Third, an optimal selection of the operating point and essential passive elements was performed using the improved optimization method. Finally, the s-parameters and noise figure of the amplifier were measured, and stability and third-order intermodulation products were also checked.

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“…and carefully checked their accuracy. A typical comparison of the TriQuint TOM2 and Dobes (called Dobes in [17,18]) models [17][18][19][20]25] is shown in Fig. 3.…”

Section: Approximating the Scattering Parametersmentioning

confidence: 99%

“…At present, there are many pHEMT models available in CAD tools. Their precision is often compared in references in a detailed way [17][18][19][20]. We have identified more types of the models used in low noise amplifiers, and we selected the one as a compromise between its accuracy and complexity.…”

Section: Introductionmentioning

confidence: 99%

Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers

Dobeš¹,

Michal²,

Popp³

et al. 2015

RADIOENGINEERING

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“…In high-tech analog and digital circuits these devices are considered as attractive alternatives for high temperature, high power and high frequency applications due to their large bandgap, high breakdown voltage, large saturation velocity, high thermal conductivity and simplicity of fabrication [1][2][3]. However, with the reduction in channel length, control of short-channel effects (SCEs) is one of the biggest challenges in further downscaling of the technology [4,5]. The predominating SCEs are threshold voltage, drain induced barrier lowering (DIBL), subthreshold swing factor and higher leakage currents with decreasing channel length.…”

Section: Introductionmentioning

confidence: 99%

A Two-Dimensional Numerical Analysis of Subthreshold Performances for Double-Gate GaN-MESFETs

Lakhdar¹,

Djeffal²,

Dibi³

et al. 2010

AIP Conference Proceedings

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In this paper, a new deep submicron double-gate (DG) GaN-MESFET structure and its 2-D numerical model have been proposed, investigated and expected to suppress the short-channel-effects (SCEs) and improve the subthreshold behavior for deep submicron GaN-MESFET-based applications. The models have been used to predict and compare the performances of downscaled DG and conventional GaN-MESFETs, where the comparison of device architectures shows that the proposed DG GaN-Based MESFET exhibits a superior performance with respect to the conventional MESFET both in terms of threshold voltage and DIBL (Drain Induced Barrier Lowering) effect in deep submicron domain. The obtained results make (DG) GaN-MESFET a promising candidate for future MESFET-based circuits.

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“…Recently, applications of microwave and high-efficiency heterostructure field-effect transistors (HFETs) have been widely researched and reported [1][2][3][4][5][6]. Among of the HFETs, the metal-semi conductor field-effect transistors (MESFETs) use the gate depletion generated by metal-semiconductor contact to control the drain current [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…Among of the HFETs, the metal-semi conductor field-effect transistors (MESFETs) use the gate depletion generated by metal-semiconductor contact to control the drain current [1,2]. However, the gate metal and the doped channel are contacted directly, which makes worse Schottky gate characteristics, limiting the gate forward voltage and the voltage swing.…”

Section: Introductionmentioning

confidence: 99%

Microwave complementary doped-channel field-effect transistors

Tsai¹,

Chiu²,

Lour³

et al. 2009

Superlattices and Microstructures

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A comprehensive four parameters I–V model for GaAs MESFET output characteristics

Cited by 37 publications

References 12 publications

Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers

Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers

A Two-Dimensional Numerical Analysis of Subthreshold Performances for Double-Gate GaN-MESFETs

Microwave complementary doped-channel field-effect transistors

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