International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
DOI: 10.1109/iedm.1999.823871
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A comprehensive MOSFET mismatch model

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Cited by 48 publications
(28 citation statements)
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“…Performance is estimated at each {s, d} combination with (13). g i,max and g i,min are the minimum and maximum values of performance g i seen so far in the optimization run.…”
Section: H Evaluation and Cost Calculationmentioning
confidence: 99%
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“…Performance is estimated at each {s, d} combination with (13). g i,max and g i,min are the minimum and maximum values of performance g i seen so far in the optimization run.…”
Section: H Evaluation and Cost Calculationmentioning
confidence: 99%
“…The simulator was a proprietary SPICE-like simulator of a leading analog semiconductor company, with accuracy and runtime comparable to HSPICE. We used the process variation model of [13] because of its excellent accuracy, and to illustrate the ability of SANGRIA to handle a large number of process variables. Accordingly, the local variation parameters for each transistor are the following: NSUB (substrate doping concentration), VFB (flatband voltage), WINT (width variation), LINT (length variation), U0 (permittivity), RSH (sheet resistance), and TOX (gate oxide thickness).…”
Section: B Technology and Variation Modelmentioning
confidence: 99%
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“…In [19], BSIM parameters are used for modeling. In [6], a physics based model has been proposed where mismatch is attributed to a number of physical parameters.…”
Section: Previous Workmentioning
confidence: 99%
“…Ref. [29] described a model that expresses the mismatch in terms of basic physical parameters such as the sheet resistance, channel dopant concentration, carrier mobility, and gate oxide thickness. Virtually all mismatch models for MOSFETs express the variation in the drain current as some function of random parameters, which is typically bias-dependent.…”
Section: B Mismatch In Mos Transistorsmentioning
confidence: 99%