A comprehensive review on microwave FinFET modeling for progressing beyond the state of art

Crupi, Giovanni; Schreurs, Dominique; Raskin, Jean‐Pierre; Caddemi, Alina

doi:10.1016/j.sse.2012.10.015

Cited by 71 publications

(43 citation statements)

References 112 publications

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“…As referred to the reference paper Ref. [8], different equivalent resistances associated with different temperatures may provide excellent correspondences addressing the RF noise modeling, which may be explored later in the subsequent study.…”

Section: Discussionmentioning

confidence: 99%

The Effects of Thickness of Source/Drain Fin on <I>P</I>-Channel FinFET Devices and the Corresponding Quantum Effects

Yang¹,

Tsai²,

Chang³

et al. 2014

Nanosci Nanotechnol Lett

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FinFET devices are considered to be the potential ones replacing the traditional CMOSFET in the sub-nanometer regime. The 3-D structural fins depress the leakage current from being outrageously out of control as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Three different kinds of thickness (namely, 0.110 m, 0.115 m, and 0.120 m) with the same channel length (0.1 m) are put into comparison. The phosphorus implants of the same dose with different energies for N-well threshold voltage adjustment are also taken into account. The threshold voltage, swing, and the mobility are to be determined.

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Section: Discussionmentioning

confidence: 99%

The Effects of Thickness of Source/Drain Fin on <I>P</I>-Channel FinFET Devices and the Corresponding Quantum Effects

Yang¹,

Tsai²,

Chang³

et al. 2014

Nanosci Nanotechnol Lett

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“…However, these noise parameter sets represent equivalent ways of describing the same dependence and then well‐known conversion formulae allow passing from one set to another. One typical representation of F (Γ s ) is given in terms of the minimum noise factor F min , magnitude and phase of the optimum source reflection coefficient Γ opt , and the equivalent noise resistance R n :

F = F_{\min} + 4 \frac{R_{normaln}}{Z_{0}} \frac{{| Γ_{normals} - Γ_{opt} |}^{2}}{{| 1 + Γ_{opt} |}^{2} true(1 - {| Γ_{normals} |}^{2} true)}

where, the reference impedance Z 0 is usually 50 Ω. As can be easily seen from Eq.…”

Section: Experimental Microwave Set‐up and Tested Devicementioning

confidence: 99%

GaN HEMT noise modeling based on 50‐Ω noise factor

Crupi

Caddemi

Raffo

et al. 2015

Micro & Optical Tech Letters

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The extraction of a high-frequency ivalent circuit model plays a fundamental role for the development of any emerging transistor technology. Indeed, an equivalent circuit can provide a valuable support for microwave engineers to ensure a fast and reliable optimization of both device fabrication and circuit design. As far as gallium nitride (GaN) HEMTs are concerned, research efforts have been mostly focused on determining equivalent circuits able to reproduce their large-signal behavior. Nevertheless, an increasing amount of interest is also being devoted to noise equivalent circuits, due to the interesting GaN technology noise performance. Within this context, the purpose of the present paper is to extract and fully validate an accurate noise model for GaN HEMTs based on a simple, fast, and reliable extraction procedure. The noise model is obtained by assigning an equivalent noise temperature to each resistor of the small-signal equivalent circuit. The accuracy of the extracted noise model is confirmed by the good agreement between measured and simulated high-frequency noise parameters

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“…FinFETs are nowadays the leading devices for CMOS applications, due to their well‐known features allowing for a higher immunity to short channel effects and to completely new scaling properties and device architecture, linked to the peculiar 3D structure. Despite the enormous amount of work dedicated to the fabrication, optimization, and modeling of these devices, comparably less effort has been dedicated to their AC characterization and modeling, although the interest towards analog Radio Frequency (RF) and microwave applications fosters research in this field. On the other hand, the peculiar 3D device structure brings along a considerable amount of parasitic capacitances and resistances,() which may impair, in RF applications, the advantages brought by the gate length reduction.…”

Section: Introductionmentioning

confidence: 99%

“…Despite the enormous amount of work dedicated to the fabrication, optimization, and modeling of these devices, comparably less effort has been dedicated to their AC characterization and modeling, although the interest towards analog Radio Frequency (RF) and microwave applications fosters research in this field. On the other hand, the peculiar 3D device structure brings along a considerable amount of parasitic capacitances and resistances,() which may impair, in RF applications, the advantages brought by the gate length reduction. Since variability is known to significantly impact the DC device behavior, the same is expected for AC performance, both at the active device and at the parasitics level.…”

Section: Introductionmentioning

confidence: 99%

Variability of FinFET AC parameters: A physics‐based insight

Bughio

Guerrieri

Bonani

et al. 2017

Int J Numerical Modelling

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This paper presents a fully physics‐based variability analysis of single‐fin double‐gate Metal Oxide Semiconductor FET (MOSFET) AC parameters, without resorting to any approximated quasi‐static analysis based on the variations of the DC drain current or charge. Variations of the AC parameters have been investigated as a function of all the relevant geometrical and physical parameters, with emphasis on the ones affecting the device parasitics, especially important for high‐frequency analog applications. A numerically efficient Green's function technique is applied to reduce the simulation time to a few percent of the time required for standard Monte Carlo–based variability analysis. The Green's function approach especially allows for a deep insight into the so‐called local variability source, highlighting the regions of the device where physical variations most significantly affect the output AC performances and opening the way for possible structure optimization. Although presently implemented in a 2D in‐house software, the technique can be easily exported to standard 3D Technology Computer‐Aided Design (TCAD) tools, eg, for tri‐gate FinFET analysis.

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A comprehensive review on microwave FinFET modeling for progressing beyond the state of art

Cited by 71 publications

References 112 publications

The Effects of Thickness of Source/Drain Fin on <I>P</I>-Channel FinFET Devices and the Corresponding Quantum Effects

The Effects of Thickness of Source/Drain Fin on <I>P</I>-Channel FinFET Devices and the Corresponding Quantum Effects

GaN HEMT noise modeling based on 50‐Ω noise factor

Variability of FinFET AC parameters: A physics‐based insight

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