Two-dimensional (2D) materials have potential application
and wide
development prospects in photoelectron and spintronic devices. However,
the properties of different growth conditions are challenging to study
in the future. This, in turn, hinders further research into 2D materials
and the manufacture of high-quality devices. A comprehensive understanding
of the ultrafast laser spectroscopy and dynamics that take into account
the substrate-transition metal dichalcogenide (TMD) interaction is
lacking. Here, the strain effect is elucidated by systematically investigating
the interfacial interaction between different substrates and MoS2. The strain and interface engineering of MoS2/seeds
layer heterointerface and light-matter coupling are discussed in the
Raman and photoluminescence spectra. The dramatic enhanced PL originates
from the phase transition of MoS2 on different substrates
and electron–hole pairs dissociated by exciton screening effect.
Finite-difference time-domain simulation confirmed that the electric
field, magnetic field, and polarization field of the heterojunction
system changed after the strain was applied. In addition, based on
the dependence of physical parameters of MoS2, the relative
numerical changes of physical parameters of MoS2 films
on different substrates as well as the photoelectric transfer, strain,
and charge doping levels on the surface or interface will provide
a direction for optimizing the selection of various devices.