A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

Heijmen, T.; Roché, Philippe; Gasiot, Gilles; Forbes, K.R.; Giot, D.

doi:10.1109/tdmr.2007.897517

Cited by 61 publications

(24 citation statements)

References 23 publications

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“…The critical charge associated with such an event is denoted Q crit,h . If hits at both nMOS and pMOS drains are considered, then the following expression models the bit cell SER [27]:…”

Section: Soft Error Rate (Ser)mentioning

confidence: 99%

Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies

Bota

Torrens

Verd

et al. 2015

Solid-State Electronics

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“…The critical charge associated with such an event is denoted Q crit,h . If hits at both nMOS and pMOS drains are considered, then the following expression models the bit cell SER [27]:…”

Section: Soft Error Rate (Ser)mentioning

confidence: 99%

Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies

Bota

Torrens

Verd

et al. 2015

Solid-State Electronics

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“…Area is much less a concern here because in general the number of latches and/or flip-flops in an IC is orders of magnitude less than the amount of SRAM bit cells. As a result, latch and flip-flop SER shows a much larger variation between different cell designs Heijmen et al of Philips, STMicroelectronics, and Freescale Semiconductor published measured alpha-and neutron-SER data of five different flip-flops from a standard-cell library [25]. The flip-flop cells differed in threshold voltage, circuit schematic, cell height, drive strength, and/or functionality.…”

Section: Ser Of Latches and Flip-flopsmentioning

confidence: 99%

Soft Errors from Space to Ground: Historical Overview, Empirical Evidence, and Future Trends

Heijmen

2010

Frontiers in Electronic Testing

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Soft errors induced by radiation, which started as a rather exotic failure mechanism causing anomalies in satellite equipment, have become one of the most challenging issues that impact the reliability of modern electronic systems, also in ground-level applications. Many efforts have been spent in the last decades to measure, model, and mitigate radiation effects, applying numerous techniques approaching the problem at various abstraction levels. This chapter presents a historical overview of the soft-error subject and treats several "disaster stories" from the past. Furthermore, scaling trends are discussed for the most sensitive circuit types.

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“…When an energetic particle strikes a sensitive region in a semiconductor device, it creates a track of electron-hole pairs that can cause a transient current to flow through the pn junction altering the voltage of the circuit stroke node [7]. The sensitive 0018-9499/$25.00 © 2008 IEEE sites are the surroundings of the reverse-biased drain junctions of a transistor biased in the off state.…”

Section: Detecting Soft Errors By Using Bulk-bicsmentioning

confidence: 99%

Tbulk-BICS: A Built-In Current Sensor Robust to Process and Temperature Variations for Soft Error Detection

Neto

Kastensmidt

Wirth

2008

IEEE Trans. Nucl. Sci.

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Abstract-This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor compensating process and temperature variations. By choosing different configurations in the trimming bits, it is possible to adjust the performance of the sensor, which can increase the number of transistors monitored by a single sensor reducing the area overhead. Monte Carlo simulations are used to evaluate the sensor behavior. Results from a case-study circuit with embedded Tbulk-BICS confirm the efficiency of the technique.

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A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

Cited by 61 publications

References 23 publications

Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies

Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies

Soft Errors from Space to Ground: Historical Overview, Empirical Evidence, and Future Trends

Tbulk-BICS: A Built-In Current Sensor Robust to Process and Temperature Variations for Soft Error Detection

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