A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method

Rejaiba, Omar; Cal, Alejandro Francisco Braña de; Matoussi, Adel

doi:10.1016/j.physe.2019.01.008

Cited by 17 publications

(2 citation statements)

References 34 publications

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“…It shows a clear exponential increase in the values of G with the increase in the frequency value and becomes almost similar at 0.6 V. This behavior may be due to the existence of an additional interface state density at MASnI 3 /Spiro‐OMeTAD interface. Apart from it, the merge of the plots near the 0.6 V and tending to decreasing type behavior towards 0.8 V for all the frequencies indicates the disappearance of interface trap effects and the presence of the interface trap state is actually liable to decreasing type behavior towards 0.8 V for all the frequencies in the conduction curve 72,73 …”

Section: Resultsmentioning

confidence: 90%

“…Apart from it, the merge of the plots near the 0.6 V and tending to decreasing type behavior towards 0.8 V for all the frequencies indicates the disappearance of interface trap effects and the presence of the interface trap state is actually liable to decreasing type behavior towards 0.8 V for all the frequencies in the conduction curve. 72,73 Figure 6D shows the capacitance spectra in dark and less than 1 sun illumination at room temperature. It shows that the value of capacitance is higher in dark in comparison to illumination.…”

Section: Admittance and Impedance Spectroscopy Measurementsmentioning

confidence: 99%

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Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI ₃ perovskite solar cell device

Kumar

Raj

Kumar

et al. 2022

Intl J of Energy Research

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Summary Recently, lead‐free perovskite solar cell (PSC) heterostructure using CH3NH3SnI3 (MASnI3) absorber layer received significant attention due to their superior device performance. However, the effect of deep defect state on device performance is only little known about the MASnI3 absorber based PSC. In the present study, initially we optimized the power conversion efficiency of the device via the bandgap tuning and electron affinity variations in MASnI3 absorber layer using SCAPS‐1D simulator. Thereafter, the capacitance‐voltage (C‐V), Mott‐Shottkey (MS) (1/C2‐V) and conductance‐voltage (G‐V) measurements are performed through simulation approach, which confirmed a solid sign of deep defects in the perovskite heterostructure device. In addition, temperature dependent capacitance‐frequency (C‐f) characteristics confirmed the clear expectancy of thermally‐induced variations in capacitance (or dielectric constant) under illumination and dark, respectively. Further, supremacy of the space charge region in MASnI3 based PSC is confirmed from the voltage dependent semicircular nature of the Nyquist plots. Shrink in the semicircles of the Nyquist plots with the increase of the forward bias voltage also confirm the improvement of carriers under forward bias which increase the conductivity and therefore decrease the impedance.

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Section: Resultsmentioning

confidence: 90%

Section: Admittance and Impedance Spectroscopy Measurementsmentioning

confidence: 99%

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI ₃ perovskite solar cell device

Kumar

Raj

Kumar

et al. 2022

Intl J of Energy Research

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Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode

Çavdar

Demirölmez

Turan

et al. 2022

J Mater Sci: Mater Electron

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Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Güçlü,

Tanrıkulu,

Ulusoy

et al. 2024

J Mater Sci: Mater Electron

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In this study, frequency-dependent physical parameters, voltage-dependent of surface traps/states, and their lifetime of the Au/(ZnCdS-GO:PVP)/n-Si (MPS) type structures were investigated by using conductance measurements (Y = 1/Z = G + jωC) both in wide range frequency (3 kHz-3 MHz) and voltage (from − 4.00 V to 1.50 V). Firstly, basic physical parameters such as density of doping donor atoms (ND), diffusion potential (VD), Fermi-energy (EF), barrier height ΦB(C-V), depletion-layer thickness (WD), and maximum electric field (Em) were calculated from these measurements for each frequency. These values were found as 1.69 × 1016 cm−3, 0.444 eV, 0.193 eV, 0.606 eV, 1.31 × 10−5 cm, 7.66 × 104 V/cm for 10 kHz, and 1.42 × 1016 cm−3, 0.461 eV, 0.198 eV, 0.628 eV, 1.46 × 10−5 cm, 7.80 × 104 V/cm for 3 MHz, respectively. While ND decreases with increasing frequency, the other parameters increase. The density of surface states (Nss) and their lifetimes (τ) were also obtained from conductance techniques. While the Nss were changed between 2.78 × 1012 at 0.40 V and 2.61 × 1012 eV-1cm−2 at 1.3 V, and the Nss-V curve shows two distinctive peaks which correspond to 0.5 V (2.87 × 1012 eV−1cm−2) and 1.2 V (2.68 × 1012 eV−1cm−2), respectively. The values of τ were changed between 105 µs (at 0.4 V) and 15.3 µs (at 1.3 V) and decreased with increasing voltage as exponentially. These lower values of Nss were attributed to the used (ZnCdS-GO:PVP) interlayer.

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A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method

Cited by 17 publications

References 34 publications

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI ₃ perovskite solar cell device

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI ₃ perovskite solar cell device

Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode

Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

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A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method

Cited by 17 publications

References 34 publications

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI 3 perovskite solar cell device

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI 3 perovskite solar cell device

Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode

Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Contact Info

Product

Resources

About

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI ₃ perovskite solar cell device

Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI ₃ perovskite solar cell device