A comprehensive VCSEL device simulator

Streiff, Matthias; Witzig, Andreas; Pfeiffer, M.; Royo, P.; Fichtner, W.

doi:10.1109/jstqe.2003.818858

Cited by 60 publications

(27 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the impact of oxide aperture in VCSELs was not addressed. In a recent work of Streiff et al [15], a coupled electro-opto-thermal VCSEL simulation model was developed, but the simulation results presented was only for moderate injection level below the thermal rollover condition. One of the most comprehensive numerical models accounts for two-dimensional (2-D) current and heat transport, transverse mode competition, and thermal lensing for both gain-guided and index-guided structures [16].…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Liu

Choquette

et al. 2005

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Liu

Choquette

et al. 2005

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

“…In fact such advanced models, dealing with complete or partially coupled opto-electro-thermal phenomena, exist both commercially [83], [84], [85], [86] and also in the research groups [87]. Unfortunately their application is very recourseconsuming and usually requires powerful super-computers equipped with parallel processors and enormous amount of memory.…”

Section: Physical Processes In Lasers and Vcsel Designmentioning

confidence: 99%

High Speed VCSELs for Optical Interconnects

Mutig

2011

Springer Theses

View full text Add to dashboard Cite

The forecast for the serial transmission speeds used for data communication s ystems is a continued exponential increase with time, directly in concert with silicon integrated circuit scaling and in response to human society's perpetual hunger for massive increases in bandwidth. Electrical interfaces for single channel bit rates beyond 10 Gbit/s are being standardized for a variety of applications, including for example (with an expected data -rate): Fibre Channel FC32G (34 Gbit/s), InfiniBand (20 Gbit/s), common electrical interface CEI (25-28 Gbit/s), and universal serial bus protocols USB 3.0 (up to 25 Gbit/s). As a result, the fundamental electro-magnetic limitations of copper wire-based links at bit rates >10 Gbit/s make fiber based optics for data communication indispensable at distances >1 m. At shorter distances, problems associated with electrical transmission lines at such high frequencies, e. g. high power consumption, strong signal attenuation, signal distortion and electromagnetic interference, lead to unstoppable and progressive penetration of optical communication links into traditional copper interconnect markets. These trends greatly expand the applications of vertical cavity surface emitting lasers (VCSELs) and VCSEL arrays as very inexpensive, efficient, reliable, readily manufacturable and compact laser light sources for next-generations of fiber-optic, free-space, board-to-board, module-to-module, chip-to-chip and on-chip interconnects and related information systems and networks.Already today oxide-confined GaAs-based VCSELs emitting at 850 nm are the key components for low cost high speed local and storage area network (LAN/SAN) data communication systems. Furthermore, active optical cable links for short-reach computer and consumer applications, for example USB, DisplayPort, and HDMI standards, are increasingly based on VCSELs operating in the near-infrared spectral range. Immense research and development effort all around the world resulted in the great progress in the area of highspeed GaAs-based VCSELs in the last few years. At the standard wavelength of 850 nm room temperature error free data transmission at the bit rate of 32 Gbit/s has been demonstrated in 2009. Also at longer wavelengths bit rates of 35 Gbit/s (980 nm) and 40 Gbit/s (1100 nm) have been achieved at room temperature using GaAs-based VCSELs, while the latter device was based on the buried tunnel junction, requiring additional epitaxial growth step and making the laser fabrication more complicated. While the wavelength of 850 nm is the current standard for LAN/SAN applications, potential competitive standards at 980 and 1100 nm have many critical advantages for very and ultra short reach systems. This includes smaller operational voltages due to the lower photon energy, which are decisive for complementary metal oxide semiconductor (CMOS) drivers, transparency of the GaAs substrate, which is important for bottom-emitting lasers, and deeper potential wells, suppressing the escape of injected non-equilibrium carr...

show abstract

“…There is also another comprehensive VCSEL model known from literature [10][11][12] without some of the above shortcomings. But also in this case other than ours model simplifications (e.g.…”

Section: The Modelmentioning

confidence: 99%

Sensitivity of a VCSEL threshold performance to inaccuracies in its manufacturing

Zujewski

Nakwaski

2010

Opto-Electronics Review

View full text Add to dashboard Cite

The paper describes an impact of various possible inaccuracies in manufacturing of verticalcavity surface-emitting diode lasers (VCSELs), like thicknesses and compositions of their layers different from assumed ones, on VCSEL room-temperature (RT) continuous-wave (CW) threshold performance. To this end, the fully self-consistent comprehensive optical-electrical-thermal-recombination VCSEL model has been applied. While the analysis has been carried out for the 1.3-μm oxide-confined intra-cavity contacted GaInNAs/GaAs VCSEL, its conclusions are believed to be more general and concern most of modern VCSEL designs. As expected, the VCSEL active region has been found to require the most scrupulous care in its fabrication, any uncontrolled variation in compositions and/or thicknesses of its layers is followed by unaccepted RT CW lasing threshold increase. Also spacer thicknesses should be manufactured with care to ensure a proper overlapping of the optical standing wave and both the gain and lossy areas within the cavity. On the contrary, less than 5% thickness changes in distributed-Bragg-reflectors are followed by nearly insignificant changes in VCSEL RT CW threshold. However, exceeding the above limit causes a rapid increase in lasing thresholds. As expected, in all the above cases, VCSELs equipped with larger active regions have been confirmed to require more careful technology. The above results should enable easier organization of VCSEL manufacturing.

show abstract

A comprehensive VCSEL device simulator

Cited by 60 publications

References 30 publications

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

High Speed VCSELs for Optical Interconnects

Sensitivity of a VCSEL threshold performance to inaccuracies in its manufacturing

Contact Info

Product

Resources

About