A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept

Tahaei, Seyyedeh Hoda; Yousefi, Reza; Aderang, Habib

doi:10.1016/j.spmi.2018.11.004

Cited by 29 publications

(7 citation statements)

References 31 publications

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“…An interesting matter for further computational investigations is the synergy of MFMIS or MFIS-based configurations with some modern enhancement methods such as gate work-function engineering, 41 global optimization, 49 dielectric engineering, 16,50 and chemical and electrostatic doping engineering, 51,52 in order to improve some demerits such as mitigating the leakage current, suppressing the ambipolar behavior, and reducing the off-current. More importantly, emerging nanoscale FETs based on graphene sheet/nanoribbon [53][54][55][56][57][58][59] can also be endowed with MFMIS/MFIS configurations to boost their analog and switching performance while paving the way toward modern applications.…”

Section: Resultsmentioning

confidence: 99%

“…13,14 For this reason, several improvement techniques have been proposed to mitigate the DSDT issue while boosting the performance of the ultrascaled CNT-TFET. Particularly, we cite some approaches, which have been reported to improve the CNT-TFET at ultrascaled regime, namely, the use of p-n doping profile, 15 dielectric engineering, 16 doping engineering, 17,18 heterostructure engineering, 19 ungated region, 20 dual-material gate design, 21 and strain engineering. 22 Therefore, more approaches and improvements techniques should be proposed to increasingly boost the performance of ultrascaled CNT-based TFETs.…”

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confidence: 99%

“…The adopted computational approach is based on solving self-consistently, the Poisson equation and the non-equilibrium Green's function formalism in the ballistic limit, in conjunction with the one dimensional Landau-Khalatnikov equation to involve the MFM effects. 23 The proposed MFM strategy is different from the previously proposed improvement approaches [15][16][17][18]20,21 that aim to dilate the DSDT window while improving the device performance. The proposed negative capacitance (NC) CNT-TFET uses the MFM-induced amplified internal voltage [23][24][25] to boost the switching characteristics of the p-i-n CNT-TFET.…”

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confidence: 99%

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Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Tamersit

2021

ECS J. Solid State Sci. Technol.

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In this paper, the metal-ferroelectric-metal (MFM) gating design is used to boost the switching performance of the nanoscale p-i-n carbon nanotube (CNT) tunneling field-effect transistors (TFET). The modeling investigation is based on a rigorous computational approach that combines a self-consistent quantum simulation with the one dimensional Landau–Khalatnikov equation while considering ballistic transport conditions. The numerical results have revealed that the ferroelectric-induced amplified internal gate voltage is efficient in improving the switching performance of the p-i-n CNT tunneling FET. Particularly, the negative capacitance (NC) CNT tunneling FET has exhibited higher on-current, higher current ratio, steeper subthreshold swing, higher I60 factor, and faster intrinsic delay than those provided by the conventional design. In addition, the impact of the ferroelectric (FE) layer thickness on the switching figures of merit has also been assessed, where TFETs with thicker FE layers have exhibited more improved switching performance than those with thinner FE layers. The obtained results indicate that the MFM-based gating design can be an alternative improvement technique for ultrascaled p-i-n CNT tunneling FETs.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Tamersit

2021

ECS J. Solid State Sci. Technol.

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“…However, biosensors based on conventional TFET need ultra-steep doping profile at the source and drain regions to generate abrupt junctions [17][18][19][20][21][22]., which tends to produce random dopant fluctuations (RDFs) in heavily doped active region and leads to high thermal budget in manufacturing process [23,24].what's more, low ON-state current is an inherent disadvantage in these TFETs, which is limited by quantum tunneling effects between source-channel interface. According to the generation mechanism of tunneling current, semiconductor with lower band gap is required in source region and material with high electron mobility is necessary between source and channel interface.…”

Section: Introductionmentioning

confidence: 99%

Study of an asymmetry tunnel FET biosensor using junctionless heterostructure and dual material gate

Xie

2022

Eng. Res. Express

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In recent years, label-free sensors have been studied extensively for biomolecule detections. Label-free biosensors based on MOSFETs could achieve high detection sensitivity, the subthreshold swing of such sensors cannot break the limitation of 60mV/Dec due to the physical mechanism of thermal electron emission. However, subthreshold swing less than 60mV/Dec can be achieved in biosensors based on tunnel FETs working in band to band tunneling (BTBT) mode. Usually, label-free biosensors have a nanogap under the gate electrode both in MOSFET and tunnel FET (TFET), which can electrically sense the characteristics of biomolecules by dielectric constant modulation effect. In this article, we propose a novel nanogap embedded and dielectric modulated asymmetry tunnel FET biosensor with junctionless heterostructure and dual material gate, where different biomolecules can be detected effectively by adjusting the workfunctions for gate electrodes. Influences of tunnel gate, auxiliary gate and back gate workfunctions on sensitivities are explored. In addition, device-level gate effects are simulated by considering neutral and charged biomolecules. The influence of different dielectric constant at fixed charge density is also studied. Simulation results show that asymmetry dual material gate junctionless heterostructure tunnel FET (ADMG-HJLTFET) biosensor can provide higher switch ratio and higher sensitivity.

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“…6,7 In order to improve the electrical properties of tunnel transistors, various methods have been used, including electrically doping or charge plasma, lightly doping, Schottky-Ohmic structure, multimaterial gate, and heterogeneous structures. [8][9][10][11][12][13] In most of previous studies, the main objective has been to reduce am-bipolar and leakage current and the ON-current is not significantly changed. The analog parameters of the above structures have also been less investigated.…”

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confidence: 99%

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Abbaszadeh

Yousefi

Aderang

2020

ECS J. Solid State Sci. Technol.

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By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green's function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ONcurrent of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (g m ) and unity-gain frequency (f t ).

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A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept

Cited by 29 publications

References 31 publications

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Study of an asymmetry tunnel FET biosensor using junctionless heterostructure and dual material gate

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

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