A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

Li, Di; Wang, Geng; Chen, Yang; Li, Lin; Shrivastav, Gaurav P.; Oak, S.; Tasch, A.F.; Banerjee, Sanjay K.; Obradovic, B.

doi:10.1016/s0168-583x(01)00699-1

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…The scaling-down of semiconductor devices requires ion implantation profiles to be simulated in topographically complex structures. Li et al 215 developed a three-dimensional Monte Carlo code for simulation of the ion implantation into multi-material systems with intricate topography. A threedimensional trajectory-replication algorithm allowed the calculation time to be reduced by two orders of magnitude.…”

Section: Fundamental Studiesmentioning

confidence: 99%

Atomic Spectrometry Update. Atomic mass spectrometry

Bacon¹,

Crain

Vaeck

et al. 2002

J. Anal. At. Spectrom.

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Section: Fundamental Studiesmentioning

confidence: 99%

Atomic Spectrometry Update. Atomic mass spectrometry

Bacon¹,

Crain

Vaeck

et al. 2002

J. Anal. At. Spectrom.

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“…Over the years, multiple models and tools have been developed to accurately predict dopant implantation, diffusion, annealing, damage accumulation, etc. [25]; [26]; [27]; [28]; [29]. These constitutes the technology computer-aided design (TCAD) simulation of different electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

Mishra

Sonkar

2023

Front. Phys.

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On-chip integrated optical phase shifters are an important part of optical phase modulators. The performance of such modulators relies heavily on the phase shifter performance, which in turn depends on multiple process parameters. This paper reports the study of the effect of different process parameters on the performance of a silicon PN optical phase shifter obtained by process simulation using Silvaco® TCAD. The effect of dopant implantation dose, implantation energy, annealing temperature and time, wafer temperature, wafer tilt and rotation, and pre-amorphization on the phase and absorption of light is discussed. The 3-dB modulation bandwidth of a lumped phase shifter and the dependency of the performance metrics on different process parameters are presented. Monte Carlo numerical simulation shows that the free-carrier absorption has a much greater dependency on the process parameters than the phase shift. The study shows that ion channeling poses a limiting factor on the phase shifter performance, which can be improved by tilting the wafer or using a pre-amorphized substrate for implantation. The study shows that the 3-dB modulation bandwidth is highly dependent on the wafer tilt angle, rotation angle, and the lattice structure of the solid substrate. A bandwidth improvement of more than 5× is observed with 1.7× lower absorption for a pre-amorphized sample at −5 V compared to a crystalline sample with the same process flow.

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Radiation Effects Microscopy

Lohstroh

2012

Characterization of Materials

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Radiation effect microscopy (REM) describes two related areas of research that are used to study semiconductor materials, devices and the effect of ionizing radiation on their electronic properties and performance. First, ion beam induced currents (IBIC) are studied in an imaging mode and/or second the effect of the ion impact on the logic state of microelectronic components is investigated as a function of position of the incident ion (single event effect (SEE) imaging). This article reviews the most important developments and achievements of the technique during the last decade in terms of hardware and analysis. Several laboratories have developed dedicated data acquisition systems that allow the time resolved current or integrated current pulses to be digitized and the acquired waveforms to be analyzed offline. The time resolved data has improved the type of information that can be gained to include charge carrier drift velocities, diffusion effects and subsequently carrier lifetimes on nanosecond timescales. Computer modeling and simulations have been demonstrated to be very successful in describing the experimental data and will be increasingly applied to more complex device structures. Some laboratories have implemented temperature control to study temperature activated charge carrier re‐emission of defect levels and reduced temperatures can also be used to improve signal to noise. Currently, most common are wide band gap materials and semiconductor diodes or related devices as well as Silicon and SiGe based microelectronic chips, but there are indications that the application of REM might broaden in the future.

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A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

Cited by 5 publications

References 3 publications

Atomic Spectrometry Update. Atomic mass spectrometry

Atomic Spectrometry Update. Atomic mass spectrometry

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

Radiation Effects Microscopy

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